Tamura Corporation

Novel Crystal Technology, Inc.

Koha Co., Ltd.

National Institute of Information and Communications Technology, Incorporated

Daiki Wakimoto

Kohei Sasaki

Shinya Watanabe

Kimiyoshi Koshi

Quang Tu Thieu

Yuki Koishikawa

Makoto Watanabe

Kazuyuki Iizuka

Masataka Higashiwaki

Masaru Takizawa

Takekazu Masui

Yu Yamaoka

Man Hoi Wong

Yoshiaki Nakata

Takafumi Kamimura

Kazuyuki IIzuka

A Schottky barrier diode includes a semiconductor layer including a GaO-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.

Schottky barrier diode

A GaO-based semiconductor device includes a GaO-based crystal layer including a donor, and an N-doped region formed in at least a part of the GaO-based crystal layer.

GA2O3-based semiconductor device

Provided is a Schottky barrier diode which is configured from a GaO-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diodeis provided which has: a semiconductor layerconfigured from a GaO-based single crystal; an anode electrodewhich forms a Schottky junction with the semiconductor layer, and has a portion which contacts the semiconductor layerand is composed of Fe or Cu; and a cathode electrode

A method of growing a conductive GaO-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a GaO-based crystal substrate so as to grow the GaO-based crystal film. The GaO-based crystal film includes a Si-containing GaO-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

GaO-based crystal film, and crystal multilayer structure

A method for growing a &#x3b2;-GaO-based single crystal, can provide a plate-shaped &#x3b2;-GaO-based single crystal having high crystal quality. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a GaO-based melt, wherein the plate-shaped seed crystal includes a &#x3b2;-GaO-based single crystal having a defect density of not more than 5&#xd7;10/cmin the whole region; and pulling up the seed crystal to grow a &#x3b2;-GaO-based single crystal.

Method for growing B-Ga2O3-based single crystal

A &#x3b2;-GaO-based single crystal substrate includes a &#x3b2;-GaO-based single crystal. The &#x3b2;-GaO-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

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Tokyo, Japan

Daiki Wakimoto