Tdk Corporation

Taiyo Yuden Co., Ltd.

Daiki Ishii

Kenichi Yoshida

Yoshihiko Yano

Yuki Yamashita

Tomokazu Ikenaga

Tetsuhiro Takahashi

Kentaro Morito

Kazuhiro Yoshikawa

Masashi Natsume

Kentaro Nakamura

Koichi Tsunoda

Mitsuhiro Tomikawa

Junki Nakamoto

Eiko Wakata

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.

Thin film capacitor, its manufacturing method, and electronic circuit substrate having the thin film capacitor

To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

Thin film capacitor and electronic circuit substrate having the same

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

Disclosed herein is a multilayer capacitor that includes a capacitor layer having a plurality of odd-numbered electrode layers which are positioned at odd-numbered rows and a plurality of even-numbered electrode layers which are positioned at even-numbered rows. The capacitor layer includes a first side surface to which the odd-numbered electrode layers are exposed, a second side surface to which the even-numbered electrode layers are exposed, and a first planar region. The first external terminal covers the first side surface so as to be connected to the odd-numbered electrode layers. The second external terminal covers the second side surface so as to be connected to the even-numbered electrode layers. The first external terminal covers also the first planar region and is connected to the first internal electrode layer through a first via conductor extending in a stacking direction.

Multilayer capacitor

A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1&#x3e;D2.

Thin film capacitor and manufacturing method thereof

A thin-film capacitor satisfies a relationship of CTE&#x3e;CTE&#x3e;CTEregarding a linear expansion coefficient CTEof a base, a linear expansion coefficient CTEof a capacitance unit, and a linear expansion coefficient CTEof a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

Thin-film capacitor

A variable capacitance device includes: capacitors coupled in series between first and second signal terminal electrodes, each of the capacitors having a dielectric layer, a lower electrode and an upper electrode, a permittivity of the dielectric layer changing according to a voltage applied to the dielectric layer, the lower and upper electrodes sandwiching the dielectric layer; resistance films coupled between the capacitors and a bias terminal electrode; a first insulating film that contacts the resistance films; and a second insulating film that covers the capacitors, the resistance films and the first insulating film, wherein: a thermal conductivity of the first insulating film is larger than that of the second insulating film; and at least one of the resistance films has a pair of connection patterns provided on both ends thereof and resistance patterns that are coupled in parallel between the connection patterns.

Variable capacitance device and antenna device

A variable capacitance device includes: (A) a first signal line that contains multiple first variable capacitance elements connected in series; (B) a second signal line that contains multiple second variable capacitance elements connected in series; (C) a first bias line used for applying a first direct-current voltage to each of the multiple first variable capacitance elements and multiple second variable capacitance elements; and (D) a second bias line used for applying a second direct-current voltage to each of the multiple first variable capacitance elements and multiple second variable capacitance elements. And, a part of at least one of the first bias line and second bias line is arranged so that it passes between two adjacent first variable capacitance elements among the multiple first variable capacitance elements.

Variable capacitance device and communication apparatus

The variable capacitance device includes one or more of directional elements inserted between the third and fourth terminals that allow current to pass only in prescribed directions, such that a diagram formed of current paths from the third terminal to the fourth terminal for the plurality of third-terminal side resistors and the plurality of fourth-terminal side resistors when the third terminal is biased higher than the fourth terminal is line-symmetric to a diagram formed of current paths from the fourth terminal to the third terminal for the plurality of third-terminal side resistors and the plurality of fourth-terminal side resistors when the fourth terminal is biased higher than the third terminal, with respect to the serial chain of variable capacitance elements between the first and second terminals.

A variable capacitance capacitor element according to an embodiment of the present invention comprises: a supporting substrate; a first electrode layer provided on the supporting substrate; a second electrode layer provided opposite to the first electrode layer; and a dielectric layer positioned between the first electrode layer and the second electrode layer. In accordance with an aspect, a main component of the dielectric layer is represented by a composition formula BaSrTiO(0.5&#x2266;x&#x2266;0.8), and the first thin film dielectric layer has a thickness of 200 nm or smaller.

Variable capacitance capacitor element

A variable capacitance device includes: a supporting substrate having a plurality of variable capacitance elements formed thereon, the plurality of variable capacitance elements being connected in series, wherein each of the plurality of variable capacitance elements has a separate lower electrode, or at least some of the plurality of variable capacitance elements share a lower electrode, thereby forming a plural set of the lower electrodes that serves as the lower electrodes of the respective variable capacitance elements, wherein the variable capacitance device further includes an insulating moisture-resistant film and a conductive adhesive film, and wherein the conductive adhesive film and the insulating moisture-resistant film have a gap in a plan view between at least some of regions where the plural set of the lower electrodes are respectively formed so as to avoid electrical leakage between said at least some of regions through the conductive adhesive film.

A thin film electronic component includes: a substrate; a thin film electrode layer over the substrate; an inorganic insulation layer formed on the thin film electrode layer; an organic insulation layer formed on the inorganic insulation layer; and a lead-out electrode that electrically connects to the thin film electrode layer. The inorganic insulation layer has a through-hole formed therein, so as to expose a portion of the thin film electrode layer. The organic insulation layer has a through-hole formed therein, so as to expose the through-hole in the inorganic insulation layer. The lead-out electrode is formed in the through-hole in the inorganic insulation layer and the through-hole in the organic insulation layer. A shape of a borderline defining the through-hole at a top surface of the organic insulation layer in a plan view has chamfered corners.

Growing community of inventors

Tokyo, Japan

Daiki Ishii