Tokyo Ohka Kogyo Co., Ltd.

Daijiro Mori

Akira Kumazawa

Takayuki Haraguchi

Takuya Ohhashi

Takahiro Eto

Yukihisa Wada

Masaru Takahama

Kiyoshi Ishikawa

Tomoya Kumagai

Shigeru Yokoi

Kazuhiro Takahashi

Mai Sugawara

Naohisa Ueno

Shinya Koga

Natsumi Okawa

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Method for manufacturing ruthenium wiring

An etching solution for selectively performing an etching process on a compound represented by General Formula SiGe, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Etching solution and method for manufacturing semiconductor element

A surface treatment agent capable of effectively preventing pattern collapse of an inorganic pattern or a resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent includes a silylation agent and a nitrogen-containing heterocyclic compound which does not include a silicon atom.

Surface treatment agent and surface treatment method

A process removes metal impurities from an untreated chemical liquid, which includes a silylating agent. The process includes providing a strongly acidic cation-exchange resin in which a cation-exchange group is immobilized to a resin membrane or an integral structure of a particle-removing membrane and an ion exchange resin membrane in which a strongly acidic cation-exchange resin has been chemically introduced onto surfaces of pores in a porous resin. The wettability of the ion exchange resin membrane is thereafter improved by contacting the ion-exchange resin membrane with an organic solvent. The metal impurities are then removed from the untreated chemical liquid by passing the untreated chemical liquid through the ion-exchange resin membrane.

Process for preparing chemical liquid of silylating agent and surface treatment method

A film-forming material including a metal oxide such as a SiOfilm on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Film-forming material

A surface treatment liquid that can effectively prevent pattern collapse of, in particular, a silicon pattern and a surface treatment process using the surface treatment liquid. The surface treatment liquid contains a water repellent agent and an acid imide. The surface treatment process includes exposing a surface of a substrate to the surface treatment liquid to thereby hydrophobize the substrate surface.

Surface treatment process and surface treatment liquid

A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiOand a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23&#xb0; C. of not more than 6.0 or 8.5 or more.

Stripping solution for photolithography and pattern formation method

A nonaqueous cleaning liquid comprising a fluoroalkanol, a quaternary ammonium hydroxide, and an organic solvent. Compounds represented by formulae (1) and (2). Fluoroalkanol compounds include (1) H(CF)CH&#x2014;OH and (2) F(CF)(CH)&#x2014;OH In which a and b are each an integer of from 2 to 6, and c is an integer of 1 or 2.

Nonaqueous cleaning liquid and method for etching processing of silicon substrate

A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different;HS&#x2014;(CH)&#x2014;OH&#x2003;&#x2003;(2),in which x is an integer of no less than 3.

Cleaning liquid and anticorrosive agent comprising a mercapto compound and solvent

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Cleaning liquid for lithography and method for forming wiring

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below.  In the general formula (1), Rrepresents an alkyl group or an aryl group having 1-17 carbon atoms, and Rrepresents an alkyl group having 1-13 carbon atoms.

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Kawasaki, Japan

Daijiro Mori