Hitachi Metals, Ltd.

Hitachi, Ltd.

Futaba Denshi Kogyo Kabushiki Kaisha

Daiji Sakamoto

Hiromichi Suzuki

Rikizo Watanabe

Wahei Kitamura

Tadashi Mizohata

Susumu Okikawa

Hiroshi Mikino

A fluorescent display device capable of preventing variation or flickering of luminescence due to deformation of a mesh section. The fluorescent display device includes mesh-like control electrodes each being made of a material of which the coefficient of average thermal expansion is smaller than that of the glass substrate or a spacer frame at a temperature within the range of from 30.degree. C. to 250.degree. C. and is substantially equal to or larger than that of the glass substrate or the spacer frame at a temperature within a range from 30.degree. C. to the sealing temperature of the fluorescent display device.

Fluorescent display device

A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

Semiconductor device and method of manufacturing the same

A copper-base alloy for leadframes consisting essentially of 0.8-4.0 weight % of Ni, 0.2-4.0 weight % of Ti and 0.05-0.6 weight % of Mg, the balance being essentially Cu and inevitable impurities, and a ratio of Ni to Ti being 1-4. This copper-base alloy has high mechanical strength of about 50 kgf/mm.sup.2 or more and electric conductivity of 30% IACS or more as well as good solderability and solder durability. Thus, it may be used as a highly reliable material for leadframes of semiconductor devices.

Copper-base alloys for leadframes

Growing community of inventors

Yonago, Japan

Daiji Sakamoto