Dai Nippon Printing Co., Ltd.

Other

Gmc Hillstone Co., Ltd.

Junji Kido

Daigo Aoki

Hironori Kobayashi

Manabu Yamamoto

Mitsuhiro Kashiwabara

Hironori Kamiyama

Shinichi Hikosaka

Chikao Ikenaga

Osamu Shimizu

Isao Inoue

Masanori Akada

Masato Okabe

Minoru Utsumi

Koji Arai

Hiroshi Kishimoto

Tatsuya Miyoshi

Hideyuki Okamoto

Shinichi Sakano

Hiroyuki Obata

Kiyoshi Itoh

Masato Ushikusa

Isao Miyatani

Yoshihiro Baba

Yoshinori Murata

Norikatsu Nakamura

Tomoyuki Idehara

Noritaka Ishiyama

A deposition mask apparatus including a frame, a supporter including a plurality of supporting members fixed to the frame, and a deposition mask fixed to the frame is provided. The plurality of supporting members include at least a first supporting member that is closest to an intermediate position between a third portion and a fourth portion of the frame and a second supporting member that is located closer to the third portion of the frame than the first supporting member. The first supporting member in a state of warping downward from the frame with a first warping amount supports the deposition mask from below. The second supporting member in a state of warping downward from the frame with a second warping amount that is smaller than the first warping amount supports the deposition mask from below.

Deposition mask apparatus, mask support mechanism, and production method for deposition mask apparatus

A wall surface of an opening of a deposition mask includes a first wall surface that extends from a first end toward a second surface, a second wall surface that extends from a second end toward a first surface, and a connection at which the first wall surface is connected to the second wall surface. When the opening is viewed from the first surface side along a normal direction of the first surface, the first end of the opening includes a first portion that extends in a first direction and has a first dimension and a second portion that extends in a second direction intersecting the first direction and a second dimension shorter than the first dimension. The first wall surface includes a first wall surface section that extends from the first portion toward the connection and a second wall surface section that extends from the second portion toward the connection. A height of the first wall surface section is lower than a height of the second wall surface section.

Deposition mask and production method of deposition mask

A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.

Standard mask apparatus and method of manufacturing standard mask apparatus

A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.

Deposition mask and method of manufacturing deposition mask

A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.

Method for producing a lens

Structure for pattern formation, method for pattern formation, and application thereof

A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent.

Light emitting transistor

A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistorof a vertical FET structure comprising: on a substrate; a source electrode; a hole transporting layerin which a slit-shaped gate electrodeis embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrodeprovided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent. Therefore, light generated in the light emitting layercan be taken out from the drain electrode side. An electron transporting layercan be provided between the light emitting layerand the drain electrode

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Tokyo-to, Japan

Daigo Aoki