Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kokusai Electric Corpoation

Daigi Kamimura

Tomoshi Taniyama

Takashi Nogami

Takayuki Nakada

Hironori Shimada

Kenji Shirako

Akira Horii

Norihiro Yamashima

Shuhei Saido

Takafumi Sasaki

Atsushi Umekawa

Yasuaki Komae

Osamu Morita

Shigeru Odake

Tomoyasu Miyashita

Takeshi Ito

Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Substrate processing apparatus and method of manufacturing semiconductor device

Described herein is a technique capable of shortening the time required to reduce the oxygen concentration in a transfer chamber. According to the technique described herein, there is provided a substrate processing apparatus including: a transfer chamber wherein a substrate from a container is transported; a transfer robot configured to transfer the substrate through the transfer chamber; a purge gas supply mechanism configured to supply a purge gas into the transfer chamber; and a pressure control mechanism configured to control an inner pressure of the transfer chamber wherein the pressure control mechanism is provided at an exhaust channel wherethrough an inner atmosphere of the transfer chamber is exhausted, the pressure control mechanism including: an exhaust damper configured to fully open or fully close the exhaust channel; and an adjusting damper provided in the exhaust damper and configured to maintain the inner pressure of the transfer chamber at predetermined pressure.

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Substrate processing apparatus

A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

Boat for wafer processing apparatus

A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.

Substrate processing apparatus and manufacturing method of semiconductor device

There is provided a technique includes: a substrate holder including a heat insulating part and a substrate holding part disposed above the heat insulating part and holding substrates in multiple stages; a process chamber processing the substrates held by the substrate holding part; a transfer chamber adjacent to the process chamber and transferring the substrates to the substrate holding part; a transfer mechanism transferring the substrate holder; a first gas supply part installed on one side of the transfer chamber and supplying gas into the transfer chamber; a second gas supply part having gas outlets at a height position between the substrate held at a lowermost stage of the substrate holding part and the heat insulating part and supplying a gas toward the substrate holder; and a controller controlling the transfer mechanism, the first gas supply part and the second gas supply part.

Growing community of inventors

Toyama, Japan

Daigi Kamimura