Wuhan Optical Valley Information Optoelectronics Innovation Center Co., Ltd

Daigao Chen

Miaofeng Li

Lei Wang

Xi Xiao

Xiao Hu

Yuguang Zhang

Provided is a photoelectric detector, comprising: a silicon layer (), the silicon layer () comprising a first-doping-type doped region (); a germanium layer () in contact with the silicon layer (), the germanium layer () comprising a second-doping-type doped region (); and a silicon nitride waveguide (), the silicon nitride waveguide () being arranged surrounding the germanium layer () along the extension directions of at least three side walls of the germanium layer (), wherein the silicon nitride waveguide () is used for transmitting an optical signal and coupling the optical signal to the germanium layer (), and the germanium layer () is used for detecting the optical signal and converting the optical signal into an electrical signal.

Photoelectric detector

Disclosed is a photodetector with a resonant waveguide structure, including: a substrate; a light absorption layer located on the substrate and configured for detecting an optical signal; a resonant waveguide structure including a first waveguide portion and a second waveguide portion spaced apart; the first waveguide portion receives the optical signal and transmits the received optical signal to a first region of the second waveguide portion, the second waveguide portion includes a second region for coupling the optical signal to the light absorption layer, and the second waveguide portion provides a circular transmission path for transmission of the optical signal to transmit the optical signal that transmitted to the first region to the second region along part of the circular transmission path and retransmit the optical signal that flows through the second region without being coupled to the light absorption layer to the second region along the circular transmission path.

Growing community of inventors

Wuhan, China

Daigao Chen