Sharp Kabushiki Kaisha Corporation

Daigaku Kimura

Toshio Hata

Mayuko Fudeta

Norikatsu Koide

Yoshimi Tanimoto

Masahiko Sakata

Takanori Sonoda

Akinori Mizogami

Motoi Nagamori

A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

Semiconductor light-emitting device and method of producing the same

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Nitride-based semiconductor light emitting device and manufacturing method thereof

Nitride-based semiconductor light-emitting device and manufacturing method thereof

The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Nitride semiconductor light emitting device and manufacturing method thereof

In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.

Growing community of inventors

Mihara, Japan

Daigaku Kimura