Tokyo Ohka Kogyo Co., Ltd.

Daichi Takaki

Daiju Shiono

Tomoyuki Hirano

Yoshiyuki Utsumi

Junichi Tsuchiya

Masatoshi Arai

Jun Iwashita

Takashi Nagamine

Kenri Konno

Yoshitaka Komuro

Takehiro Seshimo

Takaaki Kaiho

Miki Shinomiya

Takahiro Dazai

Akiya Kawaue

Tasuku Matsumiya

Takayoshi Mori

Makiko Irie

Hideto Nito

Takeyoshi Mimura

Hirokuni Saito

Rikita Tsunoda

Masafumi Fujisaki

Isamu Takagi

Kazushige Dohtani

Kyo Hatakeyama

Makoto Sakata

A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), Vrepresents a fluorinated alkylene group, Rrepresents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as Vand Ris 2 or 3; in Formula (f-1), Rfrepresents a monovalent organic group having a fluorine atom; in Formula (f-2), Rfrepresents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Resist composition and method of forming resist pattern

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (d1) in which Rand Reach independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; or Rand Rmay be mutually bonded to form a condensed ring; m represents an integer of 1 or more; and Mrepresents an organic cation having a valency of m. 

Resist composition, method of forming resist pattern, compound, and acid diffusion control agent

A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Method of recovering resist pattern

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yxrepresents a divalent linking group; n represents an integer of 1 to 3; and M'represents an organic cation having a valency of m. 

Resist composition, method for forming resist pattern, acid generator and compound

A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Rarepresents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Raand Raeach independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. Xrepresents a counter anion.

Resist composition, method for forming resist pattern, photo-reactive quencher and compound

A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.

Method of forming resist pattern

A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Method of forming resist pattern and negative tone-development resist composition

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (Rrepresents a sulfur atom or an oxygen atom; Rrepresents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent. 

Resist composition, method of forming resist pattern and polymeric compound

A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.

Resist composition, method of forming resist pattern, polymeric compound and method of producing polymeric compound

A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2). 

Resist composition, method of forming resist pattern, polymeric compound, and compound

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below. In the formula, Wrepresents a group which is formed by polymerization reaction of a group containing a polymerizable group; Yand Yeach independently represents a divalent linking group; Yrepresents a carbonyl group or an alkylene group; Rand Reach independently represents a fluorine atom or a fluorinated alkyl group; Mrepresents an organic cation having a valency of m; and m represents an integer of 1 or more. 

Resist composition, method of forming resist pattern, polymeric compound and compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid. 

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of Rand Rindependently represents a hydrocarbon group which may have a substituent, and Rand Rmay be mutually bonded to form a ring. 

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms). 

Resist composition, method of forming resist pattern, and polymeric compound

A resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1)) containing an acid decomposable group that exhibits increased polarity under action of acid, and the amount of the structural unit (a0) is less than 50 mol %, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Rrepresents a divalent linking group; Rrepresents a &#x2014;SO&#x2014; containing cyclic group; and v represents 0 or 1.

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Kawasaki, Japan

Daichi Takaki