Kwansei Gakuin Educational Foundation

Toyota Tsusho Corporation

Toyo Aluminium Kabushiki Kaisha

Daichi Dojima

Tadaaki Kaneko

Koji Ashida

Tomoya Ihara

Yoshitaka Nishio

Moeko Matsubara

Yasunori Kutsuma

The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor substrate, the method including: a processing step for removing a portion of a base substrate and forming a pattern that includes a minor angle; and a crystal growth step for forming a growth layer on the base substrate where the patter has been formed. In addition, the present invention pertains to a method for suppressing the introduction of displacement to a growth layer, the method including a processing step for removing a portion of the base substrate and forming a pattern that includes a minor angle prior to forming the growth layer on the base substrate.

Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer

The purpose of the present is to provide a modified AlN source for suppressing downfall defects. This manufacturing method of a modified aluminum nitride source involves a heat treatment step for heat treating an aluminum nitride source and generating an aluminum nitride sintered body.

Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter semiconductor substrate. The present invention is a method for manufacturing a semiconductor substrate including a crystal growth step Sof forming a growth layeron an underlying substratehaving through holes. In addition, the present invention is a method for forming a growth layerincluding the through hole formation step Sof forming through holesin the underlying substratebefore forming the growth layeron a surface of the underlying substrate

Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes

The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strained layer removal step for removing a strained layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strained layer that has been introduced into an aluminum nitride substrate.

Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing

The problem to addressed by the present invention is that of providing a novel technique that can remove a strained layer introduced into a silicon carbide substrate by laser processing. The present silicon carbide substrate manufacturing method involves a processing step for performing laser processing to remove part of a silicon carbide substrate by irradiating the silicon carbide substrate with a laser, and a strained layer removal step for removing a strained layer that was introduced in the silicon carbide substrate by the aforementioned processing step involving heat treatment of the silicon carbide substrate. In this way, the present invention, which is a method of removing a strained layer introduced into a silicon carbide substrate by laser processing, involves a strained layer removal step for heat treating the silicon carbide substrate.

Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing

An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a growth process that grows a SiC substratein a SiC—Si equilibrium vapor pressure environment. In this way, when the SiC substrateis grown in the SiC—Si equilibrium vapor pressure environment, it is possible to provide a SiC semiconductor substrate in which the step height of the growth layer is controlled.

SiC semiconductor substrate, and, production method therefor and production device therefor

To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating areaA provided in a heating device, the present invention is a temperature distribution evaluation method which, in the heating areaA, heats a semiconductor substrateand a transmitting and receiving bodyfor transporting a raw material to and from the semiconductor substrate, and evaluates a temperature distribution of the heating areaA on the basis of a substrate thickness variation amount A of the semiconductor substrate. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600-2200° C. or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.

Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method

An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process Sthat removes a strained layer introduced on a surface of a SiC substrate; and an epitaxial growth process Sthat conducts growth under a condition that a terrace width W of the SiC substrate is increased. When a SiC semiconductor substrate is manufactured in such processes, the basal plane dislocations BPD in the growth layer can be reduced, and a yield of a SiC semiconductor device can be improved.

SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

Growing community of inventors

Sanda, Japan

Daichi Dojima