Screen Holdings Co., Ltd.

Merck Patent Gmbh

Dai Ueda

Manabu Okutani

Shuichi Yasuda

Tatsuro Nagahara

Yukifumi Yoshida

Yosuke Hanawa

Yasunori Kanematsu

Takafumi Kinuta

Song Zhang

Yuta Sasaki

Hiroaki Kitagawa

Katsuya Okumura

Katsuhiko Miya

Soichi Nadahara

A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing HOmolecules or HOfunctioning as an etchant for etching the metal, and a complex forming agent containing NHand forming a complex with ions of the metal and is adjusted to a pH of 5 or more.

Substrate processing liquid for etching a metal layer, substrate processing method and substrate processing apparatus

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Substrate processing method

A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.

Substrate processing method and substrate processing device

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Substrate processing method and substrate processing apparatus

A substrate treating method and a substrate treating apparatus which can reduce the collapse of a pattern on a substrate. The substrate treating method includes a supply step of supplying a process liquid including a sublimable substance in a molten state to a pattern-formed surface of a substrate; a solidification step of solidifying the process liquid on the pattern-formed surface so as to form a solidified body; a sublimation step of subliming the solidified body so as to remove the solidified body from the pattern-formed surface; and an organic substance removal step of removing, when the solidified body is sublimed, an organic substance precipitated on a sublimation interface, and the organic substance removal step is performed so as to overlap at least part of the sublimation step.

Substrate treating method and substrate treating apparatus

A substrate processing apparatus comprises: a first solidifier and a second solidifier. The first solidifier solidifies a liquid to be solidified adhering to a front surface of a substrate by supplying a liquid refrigerant to a back surface of the substrate at a first position. The second solidifier solidifies the liquid to be solidified by at least one of a first cooling mechanism and a second cooling mechanism. The first cooling mechanism cools the liquid to be solidified by supplying a gas refrigerant toward the substrate at a second position more distant from a center of rotation of the substrate in a radial direction than the first position. The second cooling mechanism cools the liquid to be solidified by bringing a processing surface into contact with the liquid to be solidified at the second position.

Substrate processing apparatus and substrate processing method

Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

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Kyoto, Japan

Dai Ueda