Samsung Electronics Co., Ltd.

Dai-sik Moon

Kyung-hoon Kim

Gyu-hwan Kwag

Whi-kun Yi

Sung-kyeong Kim

A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.

Growing community of inventors

Kyungki-do, South Korea

Dai-sik Moon