Tokyo Electron Limited

Tanaka Kikinzoku Kogyo K.k.

Fuji Electric Systems Co. Ltd.

Dai Shinozaki

Shigekazu Komatsu

Katsuaki Sakamoto

Atsushi Yoshida

Junichi Taniuchi

Masahiko Sugiyama

Hitoshi Kubo

Naoki Akiyama

Yuichi Makita

Yasunori Kumagai

Michikazu Nakamura

Mitsuyoshi Miyazono

Hidekazu Matsuda

Yusuke Ohshima

Kenji Matsuda

Masahiro Kato

A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.

Semiconductor device and heat-dissipating mechanism

A mounting method of sequentially mounting elements on a substrate includes a mounting process of mounting one element, which is taken out by a take-out part from an accommodating part in which the elements are accommodated, on a first contact region of the surface of the substrate where a liquid is coated. The method further includes a coating process of coating a liquid, by a coating part movably provided together with the take-out part, on a contact region of the surface of the substrate different from the first contact region when the one element is mounted on the first region.

Mounting method and mounting device

A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.

Method for evaluating semiconductor device

A circuit for protecting a DUT is disposed in parallel with a DUT which is supplied with current via wirings and switchable between conducting and non-conducting state. The circuit is switchable between conducting and non-conducing state and switched from non-conducting state to conducting state as the DUT is switched from conducting state to non-conducting state.

Circuit for protecting DUT, method for protecting DUT, testing apparatus and testing method

By allowing an electrical conduction between a probe and an electrode by a fritting phenomenon before inspection, simplification of circuit configuration and shortening of inspection time is achieved. A fritting circuit is formed in a probe card of an inspection apparatus for each probe pair consisting of two probes. A capacitor is connected to each fritting circuit. Each fritting circuit is connected in parallel to a power supply circuit having a charging power supply. Each capacitor is charged at one time by the power supply circuit. The probe pair is brought into contact with an electrode of a wafer, and a high-voltage is applied to the probe pair by a power charged in the capacitor, thereby achieving an electrical connection between each probe and the electrode by a fritting phenomenon. Then, an inspection of electrical characteristics is performed by using an electric inspection signal transmitted to each probe.

Inspection apparatus, probe card and inspection method

In an inspection method according to the invention, a plurality of driversincorporated in a testerapply a fritting voltage to respective electrodes P via first probe pinsA included in pairs of first and second probe pinsA andB and connected to the respective drivers.

Inspection method and inspection equipment

Growing community of inventors

Nirasaki, Japan

Dai Shinozaki