Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Other

Ryoden Semiconductor System Engineering Corporation

Dai Nakajima

Masahiko Fujita

Masakazu Fukada

Naoki Yoshimatsu

Yasuyuki Sanda

Masaki Kato

Hitoshi Isoda

Yuji Shirakata

Takanobu Yoshida

Tatsuya Fukase

Kiyofumi Kitai

Haruna Tada

Gourab Majumdar

Naohide Maeda

Nobuyoshi Kimoto

Masuo Koga

Ken Takanashi

Hideaki Chuma

Toru Kimura

Yoshihiro Kashiba

Taketoshi Shikano

Noriyuki Besshi

Hodaka Rokubuichi

Hiroyuki Yoshihara

Yuuji Kuramoto

Takuya Oga

Yoshihito Asao

Takayuki Yamada

Tohru Kimura

Masao Kikuchi

Tatsuya Okuda

Kei Yamamoto

Yasunari Hino

Masaru Fuku

Shinsuke Asada

Kiyoshi Ishida

Kazuhiro Tada

Taishi Sasaki

Haruyuki Matsuo

Masaki Goto

Kiyoshi Shibata

Yuetsu Watanabe

Takeshi Ohi

Toshinori Yamane

Yuya Muramatsu

Yoichi Goto

Kazuyasu Sakamoto

Atsushi Takechi

Ryuuichi Ishii

Kenjiro Nagao

Majumdar Gourab

Koichi Tsurusako

Kunihiro Yoshihara

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Semiconductor device and method for manufacturing the same

A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

Semiconductor device and method of manufacturing the same

A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface.

Thermal conductivity measurement device and thermal conductivity measurement method

This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Thermal conductivity measurement apparatus and thermal conductivity measurement method

This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Power semiconductor device and method for manufacturing power semiconductor device

A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Power module, power semiconductor device and power module manufacturing method

A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

Swaged heat sink and heat sink integrated power module

Two or more switching devices () and two or more lead frames (, and) are integrally molded by use of a molding resin () so that a power module () is formed; the power module () is made to adhere to a heat sink () via an insulating material (); the power module () and the heat sink () are fixed to a housing () of the power module composite (); the power module composite () is fixed to a case () of an electric rotating machine () via the housing ().

Electric rotating machine

A rotating electrical machine includes: a case; a rotor; a stator; a control portion including a field circuit portion used to supply a current to a control circuit and the field winding; a power circuit portion controlling a stator current; a heat sink installed so as to cool the control portion and the power circuit portion; a first waterproof portion providing waterproofing to signal terminals of the power circuit portion and the field circuit portion; a second waterproof portion provided with through-holes from which a part of the control portion and the power circuit portion is exposed and providing waterproofing between the control portion as well as the power circuit portion and the heat sink; and insulation portions installed in the through-holes of the second waterproof portion and isolating the control portion and the power circuit portion from the heat sink.

Rotating electrical machine

To obtain a rotating electrical machine preventing a functional failure and shortening of the life of brushes caused by a temperature rise of the brushes installed to a vehicle AC power generator or a motor generator. A brush holder holding brushes supplying a field current to a rotor is provided with brush temperature suppressing metal members installed substantially parallel to the brushes in the vicinity of abutment portions of the brushes and slip rings in point-, line-, or surface-contact with the brushes at least at one point besides energization terminals. The brush temperature suppressing metal members not only diffuse heat generated at the brushes, but also function as a heat capacity for a case where a large amount of heat is generated in a short time, such as during regenerative power generation and a start-up operation, and thereby prevent an excessive temperature rise of the brushes.

Brush structure with heat dissipation member

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Power semiconductor device

A rotary electric machine including a brush used to supply a field current to a field winding of a rotor, a brush holder holding the brush, a power circuit portion connected to a heat sink having fins, and a case covering the power circuit portion and the brush holder. An air passage is provided between the brush holder and the fins of the heat sink, and an opening is provided to the case so as to cover component members of the brush holder in a shape conforming to an outer peripheral portion of the brush holder, from which cooling air is allowed to pass through the air passage.

Rotary electric machine

Provided is a rotating electrical machine capable of downsizing. The rotating electrical machine includes: a stator () including an armature winding (); a rotor () provided inside the stator () in a rotatable manner; a power circuit unit () including a power circuit semiconductor switching element, for supplying a current to the armature winding (); and a control board () in which an energization-allowed time corresponding to revolution speed of the rotor () is set, for controlling supply of the current by the power circuit unit (), in which the control board () stops the supply of the current by the power circuit unit () when an integrated time of energization times to the armature winding () is longer than the energization-allowed time.

An electric rotating machine is provided that efficiently radiates heat, caused in the vicinity of a portion where a brush and a slip ring makes contact with each other, to the outside of a brush holder and that can prevent the temperature of the brush from excessively rising. The brush holder holding the brush that supplies a magnetic-field current to a magnetic-field winding by way of the slip ring is provided with an energization terminal that electrically connects a magnetic-field circuit with the brush and a brush cooling metal member that cools the brush; the brush cooling metal member radiates heat, generated in the vicinity of a contact portion between the brush and the slip ring, to the outside of the brush holder.

Growing community of inventors

Tokyo, Japan

Dai Nakajima