Samsung Electronics Co., Ltd.

Dai-geun Kim

Jin-Woo Kim

Chul-soon Kwon

Eui-Youl Ryu

Joo-chan Kim

Yong-hee Kim

Jae-Hyun Park

Sang-Wook Park

Jae-Min Yu

Don-Woo Lee

Kook-Min Kim

A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer in a predetermined region of the semiconductor substrate where the floating gate conductive layer is formed, and defining an active region. Then, a local oxide layer is formed by oxidizing a predetermined part of the floating gate conductive layer on the active region. A floating gate electrode structure is formed by patterning the floating gate conductive layer using the local oxide layer.

Flash memory device having a split gate

A semiconductor device having a measuring pattern that enhances measuring reliability and a method of measuring the semiconductor device using the measuring pattern. The semiconductor device includes a semiconductor substrate having a chip area in which an integrated circuit is formed, and a scribe area surrounding the chip area. The semiconductor device also includes a measuring pattern formed in the scribe area and having a surface sectional area to include a beam area in which measuring beams are projected, and a dummy pattern formed in the measuring pattern to reduce the surface sectional area of the measuring pattern. The surface sectional area of the dummy pattern occupies from approximately 5% to approximately 15% of a surface sectional area of the beam area.

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

Flash memory device having a split gate and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Dai-geun Kim