Intermec IP Corporation

Northrop Grumman Systems Corporation

Info Value Computing, Inc.

Info Valve Computing, Inc.

International Business Machines Corporation

Intermac Technologies Corporation

Intecmec IP Corp.

Dah-Weih Duan

Michael John Brady

Harley K Heinrich

Paul Andrew Moskowitz

Elizabeth Twyford Kunkee

Daniel Joseph Friedman

Venkata S R Kodukula

Monsong Chen

Bodhi Mukherjee

Stephane Larouche

Aparna Pappu

Venkata S Kodukula

Philip Murphy

Ian Bardwell-Jones

Martin E Roden

Alejandro Gabriel Schrott

Robert J Von Gutfeld

Thomas Anthony Cofino

Ali Afzali-ardakani

Chunbo Zhang

Ming-Jong Shiau

Christopher Adam Feild

Dino Ferizovic

Daniel R Scherrer

Lou Ruggiero

Venkata S Rao Kodukula

Laura M Woo

Greta S Tsai

Paul William Coteus

James Peter Ward

Arvin D Danielson

Richard Joseph Gambino

Ravi F Saraf

Rene D Martinez

Pixie Ann Austin

Dale L Scott

Arun K Bhattacharyya

Judith Marie Rubino

Peter Richard Duncombe

John Howland Sherman

Gregory P Krishmar-Junker

Charles M Jackson

Paul L Rodgers

Philip W Hon

Shih-En Shih

Loc B Chau

John H Sherman, Jr

Michael Louis Pinch

Michael Brent Madrid

Louis R Ruggiero

Patricia Brady, Legal Representative

David I Stones

Christopher A Field

Luc Beauvillier

Martn E Roden

A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

Microelectronics H-frame device

An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.

RF modules with an enclosure having a micromachined interior using semiconductor fabrication

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

Channelized filter using semiconductor fabrication

A microelectronics H-frame device comprising an RF crossover includes: a stack of two or more substrates, wherein a bottom surface of a top substrate comprises top substrate bottom metallization, and wherein a top surface of a bottom substrate comprises bottom substrate top metallization, wherein the top substrate bottom metallization and the bottom substrate top metallization form a ground plane that provides isolation to allow a first signal line to traverse one or more of the top substrate and the bottom substrate without being disturbed by a second signal line traversing one or more of the top substrate and the bottom substrate at a non-zero angle relative to the first signal line, at least one of the first signal line and the second signal line passing to a second level with the protection of the ground plane, thereby providing isolation from the other signal line.

Radio frequency crossover with high isolation in microelectronics H-frame device

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

RF circuit and enclosure having a micromachined interior using semiconductor fabrication

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

Filter with an enclosure having a micromachined interior using semiconductor fabrication

An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

A transformer balun fabricated in silicon and including a series of alternating metal layers and dielectric layers that define first and second outer conductors that are part of a coaxial structure. Each dielectric layer includes a plurality of conductive vias extending through the dielectric layer to provide electrical contact between opposing metal layers, where a top metal layer forms a top wall of each outer conductor and a bottom metal layer forms a bottom wall of each outer conductor and the other metal layers and the dielectric layers define sidewalls of the outer conductors. Inner conductors extends down both of the first and second outer conductors and a first output line is electrically coupled to a sidewall of the first outer conductor and a second output line is electrically coupled to a sidewall of the second outer conductor.

Silicon transformer balun

A system and method for vertically integrating heterogeneous devices into a 3D tile architecture are disclosed. The system uses high precision microelectronics fabrication techniques and known-good-die to achieve high yield to integrate devices to process radio frequency signals at microwave frequencies of approximately 300 MHz to 300 GHz and above. The inventive architecture is based on a high density of small diameter vias to manage the integrity of electrical interconnects and simplify electrical routing.

Crystalline tile

A flared feed horn including a plurality of signal lines deposited on a bottom surface of a substrate and forming part of a TEsum mode launcher, a ground plane deposited a top surface of the substrate, and an outer conductor electrically coupled to the ground plane and having an internal chamber, where the conductor includes a flared portion and a cylindrical portion. The outer conductor includes an opening opposite to the substrate defining an aperture of the feed horn. The feed horn also includes an embedded conductor positioned within the chamber and being coaxial with the outer conductor, where the embedded conductor is in electrical contact with the plurality of signal lines. The feed horn also includes a TEdifference mode launcher electrically coupled to the outer conductor proximate the aperture.

Compact wide band, flared horn antenna with launchers for generating circular polarized sum and difference patterns

An RFID tag's mobility can be increased and cost can be decreased by using high-performance mobile power antennas instead of battery powered tags. Disclosed are some power antennas that include a half wave rectifier, a full wave rectifier, and a voltage multiplier. These antennas can be cascaded to boost the power or voltage gain. Additionally, planar elements can be added to increase efficiency without decreasing mobility.

High-performance mobile power antennas

A mobile system having a portable fingerprint collecting system for generating a digitized image of a fingerprint collected from a subject, a database system configured to store a database containing a plurality of fingerprint templates cross-referenced with identification information, the database system configured to compare the digitized fingerprint images generated by the portable fingerprint collecting device with the fingerprint templates stored in the database to provide identification information for the fingerprint, and a communication system providing real time communication of the digitized fingerprint image and identification information between the portable fingerprint collecting system and the database system.

Multi-technology information capture system and method

Growing community of inventors

Torrance, CA, United States of America

Dah-Weih Duan