Lontium Semiconductor Corporation

Dafeng Zhou

Feng Chen

Hongfeng Xia

Jin Su

Shenghui Bao

Lianliang Tai

Diansheng Ren

Guangren Li

Rongliang Yu

Chuanxing Liu

Changqian Xie

Yong Shen

Xianghao Guo

Haowei Guan

Ligang Hu

Shiyong Liang

A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.

Storage device and method for manufacturing the same

A matrix switcher is provided. A code rate of an ultra-high-definition video signal is reduced on the premise that the quality of the ultra-high-definition video signal is not affected through performing a Color Space Conversion (CSC) process and/or a Digital Stream Compression (DSC) process on the ultra-high-definition video signal at the transmitting side chip, thereby reducing a bandwidth required in conversion, switch and transmission of the ultra-high-definition video signal. A matrix switch chip with a low cost and general performance is used. Then, a corresponding DSC data decompression process and/or CSC process are performed at the receiving side to recover the performance of the ultra-high-definition video signal.

Matrix switcher

Growing community of inventors

Anhui, China

Dafeng Zhou