Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Daeyong Kim

Dohyun Lee

Heonbok Lee

Tae-Yeol Kim

Donghee Seo

Donghyun Kim

Rakhwan Kim

Dongwoo Kim

Cheol Kyu Kim

Jisu Kim

Sunwoo Kang

Jinoh Kwag

Jongbum Kim

Myeongcheol Kim

Kongwoo Lee

Jooyoung Park

Youngmi Cho

Sukbeom You

Kihong Park

Chulsung Kim

Yoonchan Oh

Jongho Yang

Youngsun Cho

Jungjun Park

Pyungkang Kim

Chuyoung Choung

Jungjoon Park

Sungyu Choi

Seongheum Choi

Hyunyoung Lee

Jeongmin Hwang

Hoseok Song

Jongseong Ko

Chiho Ahn

Junhyeok Park

A fastening device includes: a support portion including a first end portion, and a second end portion, and a central portion between the first and second end portions; a first pulley, a second pulley, and a third pulley rotatably disposed on the central portion, the first end portion, and the second end portion, respectively; a first connection portion and a second connection portion respectively rotatably disposed on the first and second end portions and respectively connected to the second and third pulleys; a first fastening tool and a second fastening tool respectively connected to the first and second connection portions; and a motor connected to the first pulley, wherein a force generated by the motor and provided to the first pulley is at least partially transmitted to the second and third pulleys to vary a distance between the first and second fastening tools.

Fastening device and fastening system including the same

A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

Semiconductor device

The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.

Multi-bridge channel field effect transistor with recessed source/drain

A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

Method for forming a semiconductor device

A deposition apparatus includes a chamber, a stage which is disposed within the chamber and on which a target substrate is seated, a deposition source disposed within the chamber and including a deposition material, a plurality of nozzles connected to the deposition source within the chamber to inject the deposition material in a direction of the stage, and an ionizer disposed between the nozzles and the stage to charge the deposition material injected from the nozzles. A first electric field is generated in each of the ionizer and the nozzles, and a second electric field having an intensity less than the first electric field is generated between the stage and the ionizer. Each of the nozzles includes a plurality of protrusion tips disposed on an inner surface of each of the nozzles to charge the deposition material.

Deposition apparatus and deposition method using the same

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

Organic layer deposition assembly, organic layer deposition device including the same, and method of manufacturing organic light-emitting display device using the organic layer deposition assembly

Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.

Semiconductor device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Daeyong Kim