Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Daewon Kang

Youngdo Kim

Sangki Nam

Jonghun Pi

Jaehyeok Kim

Chansoo Kang

Changsoon Lim

Sungyeol Kim

Kyunghyun Kim

Sungho Jang

Sungyong Lim

Myunggeun Song

Hoonseop Kim

Donghyub Lee

Youngduk Suh

Byungkook Cho

Hyeoncheol Jin

Taeseok Joo

Kyunjin Lee

An apparatus includes first and second VI sensors, an optical sensor, and an arcing detector. The first VI sensor is disposed in a power filter or on a power supply line connected to a heater disposed in a lower electrode of a process chamber in which a plasma process is performed. The first VI sensor senses a harmonic generated from a first power supply supplying power to the lower electrode and outputs a first signal. The optical sensor senses an intensity of light generated from the process chamber and outputs a second signal. The second VI sensor is disposed on a power supply line connected to an upper electrode and senses a harmonic generated from a second power supply supplying power to the upper electrode and outputs a third signal. The arcing detector determines whether arcing occurs based on one or more of the first, second, and third signals.

Apparatus for arcing diagnosis, plasma process equipment including the same, and arcing diagnosis method

A display device that includes: a display panel; a frame disposed at a rear of the display panel; a substrate disposed between the display panel and the frame; and a light source mounted on the substrate. The substrate includes: a first substrate; a conductive layer located on the first substrate; a second substrate located on the conductive layer; and a light source groove formed in a portion of the second substrate to permit a portion of the conductive layer to be exposed therethrough. The light source is disposed in the light source groove and is electrically connected to the conductive layer.

Display device

A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

System of semiconductor process and control method thereof

A display device is disclosed. The display device of the present disclosure comprises: a display panel; a frame positioned behind the display panel; a first light source positioned between the display panel and the frame and providing light to the display panel; a second light source adjacent to and spaced apart from the first light source; a substrate on which the first light source and the second light source are mounted and which is positioned in front of the frame; a first light guide plate positioned on the substrate and the first light source; and a second light guide plate positioned on the substrate and the second light source and spaced apart from the first light guide plate.

A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

Method of cleaning collector of EUV light source system

Growing community of inventors

Seoul, South Korea

Daewon Kang