Samsung Electronics Co., Ltd.

Daesuk Lee

Hakseung Lee

Sangjun Park

Eunji Kim

Sungdong Cho

Kwangwuk Park

Kwangjin Moon

Jinnam Kim

Taeseong Kim

Hyoukyung Cho

A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.

Semiconductor device including via structures with undercut portions and semiconductor package including the same

Semiconductor device including via structure with head and body portions

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a first wiring layer, a first semiconductor substrate on the first wiring layer, a first dielectric layer on the first semiconductor substrate, a landing pad in the first wiring layer, a through hole that penetrates the first semiconductor substrate, the first dielectric layer, and the first wiring layer and exposes the landing pad, the through hole including a first hole and a second hole on a bottom end of the first hole, the second hole having a maximum diameter less than a minimum diameter of the first hole, and a mask layer on an upper lateral surface of the through hole.

Semiconductor packages including through holes and methods of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Daesuk Lee