Samsung Electronics Co., Ltd.

Daemyung Chun

Namsung Kim

Jaiwon Jean

Joongseo Kang

Jonghyun Lee

Kiwon Park

Byungchul Choi

Youngsub Shin

A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

Semiconductor light-emitting device including buffer structure

A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

Semiconductor light emitting device

Growing community of inventors

Hwaseong-si, South Korea

Daemyung Chun