Asm Japan K.k.

Kookmin University

Daekyun Jeong

Hiroshi Shinriki

Kunitoshi Namba

Akira Shimizu

Woo Jin Lee

Kuo-Wei Hong

Jaegab Lee

The present invention herein relates to a method of forming a through-hole in a silicon substrate. The present invention herein also relates to a method of forming an electrical connection element which penetrates through the silicon substrate, and to a semiconductor device manufactured thereby. More particularly, the present invention herein relates to a method of forming in a silicon substrate a through-hole capable of reducing roughness in a side wall of the through-hole and exhibiting low permittivity, by alternatingly laminating cationic and anionic polymer on the through-hole that has a dent on the side wall to form a porous elastic layer, and also relates to a method of forming an electrical connection that penetrates through the silicon substrate, and to a semiconductor device manufactured thereby.

Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby

A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

Method of depositing dielectric film by modified PEALD method

A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a &#x3b2;-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

Method for forming metal film by ALD using beta-diketone metal complex

A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as RuTa/Ti)Nwherein an atomic ratio of Ru/(Ta/Ti) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as RuTa/TiNwherein an atomic ratio of Ru/(Ta/Ti) is more than zero but less than 15, and z2 is 0.10 or greater.

Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition

A method of forming a Ta&#x2014;Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta&#x2014;Ru metal liner layer on a Cu wiring substrate.

Growing community of inventors

Tama, Japan

Daekyun Jeong