Samsung Electronics Co., Ltd.

Sungkyunkwan University

National Institute for Materials Science

Korea Institute of Ceramic Engineering and Technology

Daejin Yang

Chan Kwak

Hyeon Cheol Park

Doh Won Jung

Youngjin Cho

Hyungjun Kim

Jong Wook Roh

Giyoung Jo

Taewon Jeong

Kyoung-Seok Moon

Weonho Shin

Hyun Sik Kim

Yun Sung Woo

Jae-young Choi

Woojin Lee

Chang Soo Lee

Kwanghee Kim

Ki Hong Kim

Yoon Chul Son

Takayoshi Sasaki

Jinyoung Hwang

Euncheol Do

Kwang Hee Kim

Tae Won Jeong

Minoru Osada

Seung-Hyun Baik

Myoung Pyo Chun

Rujun Ma

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

Dielectric material, device including the same, and method of preparing the dielectric material

A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1&#x2212;)KNaNbOM(ASb)O&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the same

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device

A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

Relaxor-ferroelectric material and method of synthesizing the same and device including relaxor-ferroelectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:AB.(1&#x2212;)(BiNa)TiO&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the dielectric material

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same

A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

Ceramic electronic component including ceramic nanosheets having multimodal lateral size distribution and method of manufacturing the same and electronic device

A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

Ceramic dielectric and method of manufacturing the same and ceramic electronic component and electronic device

A transparent electrode including: a first layer including a thermosetting copolymer including a first repeating unit having an aromatic moiety as a pendant group or incorporated in a backbone of the copolymer and a second repeating unit capable of lowering a curing temperature, a combination of a first polymer including the first repeating unit and a second polymer including the second repeating unit, or a combination thereof; a second layer disposed directly on one side of the first layer, wherein the second layer includes graphene; and a third layer disposed on the second layer, wherein the third layer includes an electrically conductive metal nanowire.

Transparent electrodes and electronic devices including the same

A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1X[AMO]&#x2003;&#x2003;Chemical Formula 1wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n&#x2265;1.

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.

A ceramic dielectric includes a plurality of semi-conductive grains including a semiconductor oxide including barium (Ba), titanium (Ti), and a rare earth element. A ceramic dielectric also includes an insulative oxide located between adjacent semiconductor grains and an acceptor element including manganese (Mn), magnesium (Mg), aluminum (Al), iron (Fe), scandium (Sc), gallium (Ga), or a combination thereof, a method of manufacturing the ceramic dielectric, and a ceramic electronic component, and an electronic device including the ceramic dielectric.

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Yeongju-si, South Korea

Daejin Yang