Samsung Electronics Co., Ltd.

Daehyun Moon

Hyeoungwon Seo

Ilgweon Kim

Dongjin Jung

Jooyoung Lee

A method of manufacturing a semiconductor device includes forming a plurality of recess regions on an upper surface of a substrate, forming a first oxide layer in the recess regions, forming a polysilicon layer on the first oxide layer, forming a second oxide layer by oxidizing the polysilicon layer, and forming a gap-fill layer on the second oxide layer to fill the recess regions, wherein at least a portion of the polysilicon layer remains between the first oxide layer and the second oxide layer after forming the second oxide layer.

Semiconductor devices including device isolation structures and methods of manufacturing the same

Methods of fabricating semiconductor devices include forming a first impurity region in a substrate by implanting a first impurity of a first conductivity type in a cell region and a peripheral region of the substrate to a first target depth from a top surface of the substrate; forming a second impurity region in the cell region and the peripheral region by implanting a second impurity of the first conductivity type into the cell region and the peripheral region to a second target depth that is smaller than the first depth from the top surface of the substrate; forming a cell transistor with a channel in the cell region, wherein the first impurity region forms the channel of the cell transistor; and forming a peripheral transistor with a channel in the peripheral region, wherein the second impurity region forms the channel of the peripheral transistor.

Growing community of inventors

Suwon-si, South Korea

Daehyun Moon