Samsung Electronics Co., Ltd.

Daehyuk Kang

Boun Yoon

Kuntack Lee

Young-Hoo Kim

Sang Won Bae

Youngok Kim

Donghyun Kim

Hyosan Lee

Imsoo Park

Provided are nonvolatile memory devices with a three-dimensional structure and methods of fabricating the same. The nonvolatile memory device includes conductive patterns three-dimensionally arranged on a semiconductor substrate, semiconductor patterns that extend from the semiconductor substrate and intersect one-side walls of the conductive patterns, charge storage layers interposed between the semiconductor patterns and one-side walls of the conductive patterns, and seed layer patterns interposed between the charge storage layers and one-side walls of the conductive patterns.

Non-volatile memory device and method for fabricating non-volatile memory device

A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

Method of fabricating nonvolatile memory device

Growing community of inventors

Hwaseong-si, South Korea

Daehyuk Kang