L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

American Air Liquide, Inc.

Daehyeon Kim

Wontae Noh

Jean-Marc Girard

Satoko Gatineau

Julien Gatineau

Venkateswara R Pallem

Junhyun Song

The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n&#x3e;1; each R is independently an H or a C-Chydrocarbyl group; L is a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is an H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is an H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Lanthanide precursors and deposition of lanthanide-containing films using the same

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; each R is independently a H or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; o and p is independently 0, 1 or 2; o+p&#x3e;1; each R is independently hydrogen or or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and each L&#x2032; is independently NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L-M-CR-[(ER)&#x2014;NR]&#x2014;, wherein M is Ti, Zr, or Hf bonded in an &#x3b7;bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C-Chydrocarbon group; and each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group and adjacent R&#x2032;s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is Cto C. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Growing community of inventors

Seoul, South Korea

Daehyeon Kim