L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Samsung Display Co., Ltd.

American Air Liquide, Inc.

Daehyeon Kim

Wontae Noh

Jean-Marc Girard

Satoko Gatineau

Julien Gatineau

Juwon Lee

Hyejeong Park

Myeongsuk Kim

Hye Jeong Park

Venkateswara R Pallem

Chang-Min Lee

Changmin Lee

Jimyoung Ye

Hyomin Ko

Jooho Lee

Yujin Kang

Junhyun Song

A Metal-containing film forming composition comprising a precursor having the formula: M(=NR)(OR)(OR)L. Wherein, M=V or Nb or Ta; R-R=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes: m=0 or 1.

Method of forming dielectric films, new precursors and their use in the semi-conductor manufacturing

An organic electroluminescence device of an embodiment may include a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The electron transport region may include a first compound represented by Formula 1, thereby improving the moving speed of electrons. Accordingly, the organic electroluminescence device of an embodiment may show decreased driving voltage and improved efficiency.

Organic electroluminescence device and compound for organic electroluminescence device

An amine compound and a light-emitting device including the same are provided. The amine compound is represented by Formula 1: In Formula 1, Aris a group represented by Formula 1A, Aris a group represented by Formula 1B, and the other substituents are understood by referring to the description of the disclosure.

Amine compound and light-emitting device including the same

A compound is represented by Formula 1. An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes the compound represented by Formula 1. The compound represented by Formula 1 suppresses or reduces the generation of dark spots by chelating metal that migrates from an electrode.

Compound and organic light-emitting device including the same

The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Provided are an arylamine compound and an organic light-emitting device including the same.

Arylamine compound and organic light-emitting device including the same

Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n&#x3e;1; each R is independently an H or a C-Chydrocarbyl group; L is a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is an H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is an H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Lanthanide precursors and deposition of lanthanide-containing films using the same

Provided is a display device including a light emitting device and a light receiving device. The light receiving device includes a first light receiving electrode and a light receiving layer. The light receiving device receives a second light reflected from an external object and generates current.

Display device

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; each R is independently a H or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; o and p is independently 0, 1 or 2; o+p&#x3e;1; each R is independently hydrogen or or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and each L&#x2032; is independently NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L-M-CR-[(ER)&#x2014;NR]&#x2014;, wherein M is Ti, Zr, or Hf bonded in an &#x3b7;bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C-Chydrocarbon group; and each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group and adjacent R&#x2032;s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is Cto C. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Growing community of inventors

Hwaseong-si, South Korea

Daehyeon Kim