Lg Display Co., Ltd.

DaeHwan Kim

SeHee Park

Jeongho Kang

PilSang Yun

JuHeyuck Baeck

Jiyong Noh

InTak Cho

Jaeman Jang

Sunggu Kim

Sul Lee

Kwanghwan Ji

Min-Gu Kang

Younghyun Ko

JunHyeon Bae

Hoon Yim

Yongjin Park

Byungkook Choi

A thin film transistor and a display apparatus including the thin film transistor are discussed. The thin film transistor can include a light shielding layer on at least a portion of a substrate, a buffer layer on the light shielding layer, an active layer on the buffer layer, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. A gate electrode opening can be disposed in the gate electrode and is formed by removing a portion of the gate electrode.

Thin film transistor and display apparatus comprising the same

A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.

Disclosed is a display device including: a timing controller outputting image data and a data driving control signal based on an image signal and a control signal inputted from the outside; a data driver outputting a data voltage corresponding to the image data based on the data driving control signal; and a display panel displaying an image corresponding to the data voltage, and the data driver includes: a buffer array where buffer groups, each of which is composed of one or more adjacent output buffers, are disposed; a bias current controller applying a bias current to the buffer groups; and an output circuit sequentially applying the data voltage outputted from the buffer groups to data lines in response to a source output enable signal and driving method for the same.

Display device and driving method for the same

A lower-power driving display device and a driving method. The driving method of the display device includes dividing the plurality of output buffers of the data driver into a plurality of output buffer groups, each of the plurality of output buffers being configured to apply the data voltage to each of the plurality of data lines connected with the display panel, and determining the magnitude of a bias current supplied to an output buffer on the basis of a pattern of a data voltage output by the output buffer which belongs to each of the plurality of divided output buffer groups.

Low-power driving display device and driving method of same

A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

Display apparatus comprising different types of thin film transistors and method for manufacturing the same

A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

Thin film transistor substrate, shift register and display device

A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

An integrated circuit package and a display device using the same are discussed. The bottom surface of the integrated circuit package includes a first barrier bump area in which a plurality of barrier bumps is arranged, configured to be disposed between an input bump area and an output bump area; and a second barrier bump area in which a plurality of barrier bumps is arranged, configured to be disposed between the first barrier bump area and the output bump area. The first barrier bump area is closer to the input bump area than the second barrier bump area, and the second barrier bump area is closer to the output bump area than the first barrier bump area.

Integrated circuit package and display device using the same

An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

Organic light emitting display panel and organic light emitting display apparatus using the same

An organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer, an anode configuring the organic light emitting diode is connected to the first conductor part, and the anode protrudes convexly from an upper surface of the passivation layer.

Organic light emitting display panel and organic light emitting display device including the same

A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.

Thin-film transistor, method for manufacturing the same and display device comprising the same

The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.

Growing community of inventors

Paju-si, South Korea

DaeHwan Kim