Samsung Electronics Co., Ltd.

Daehoon Na

Jangwoo Lee

Jeongdon Ihm

Byunghoon Jeong

Jonghwa Kim

HyunJin Kim

Ji-yeon Shin

Chiweon Yoon

Seungjun Bae

Seonkyoo Lee

Taesung Lee

Hyunsuk Kang

ChaeHoon Kim

Ji-Yeon Shin

An equalizer includes a first pulse width controller that is configured to generate a first signal by increasing a first pulse width of a first data signal having a first logic level, the first data signal corresponding to a current data bit, a second pulse width controller that is configured to generate a second signal by increasing a second pulse width of the first data signal having a second logic level, a first sampler that is configured to generate a first sampled signal by sampling the first signal, a second sampler that is configured to generate a second sampled signal by sampling the second signal, and a multiplexer that is configured to output the first sampled signal or the second sampled signal based on a value of a previous data bit.

Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal

A memory package includes; a first memory chip including first memory pads, and a buffer chip including first buffer pads respectively connected with the first memory pads and second buffer pads connected with an external device. The buffer chip respectively communicates signals received via the second buffer pads to the first buffer pads in response to a swap enable signal having a disabled state, and the buffer chip swaps signals received via the second buffer pads to generate first swapped signals, and respectively communicates the first swapped signals to the first buffer pads in response to the swap enable signal having an enabled state.

Memory package, storage device including memory package, and storage device operating method

A memory system includes a memory device including a plurality of non-volatile memories and an interface circuit connected to each of the plurality of non-volatile memories, and a memory controller connected to the interface circuit and configured to transmit/receive data according to a first clock, wherein the interface circuit is configured to divide the first clock into a second clock, according to the number of the plurality of non-volatile memories, and transmit/receive data to/from each of the plurality of non-volatile memories, according to the second clock.

Memory device including interface circuit and method of operating the same

An interface circuit of a memory device including a plurality of memory dies including a plurality of registers corresponding to the plurality of memory dies, respectively, the plurality of registers each configured to store command information related to a data operation command, a demultiplexer circuit configured to provide input command information to a selected register from among the plurality of registers according to at least one of a first address or a first chip selection signal, the input command information being received from outside the interface circuit, and a multiplexer circuit configured to receive output command information from the selected register from among the plurality of registers and output the output command information according to at least one of a second address or a second chip selection signal may be provided.

Interface circuit, memory device, storage device, and method of operating the memory device

A storage device includes a controller including first and second pins and configured to output a multi-level chip enable signal through the second pin, and a memory device. The memory device includes third and fourth pins respectively connected to the first and second pins, and a plurality of memory chips commonly connected to the fourth pin. The plurality of memory chips respectively include a plurality of resistors connected to one another in a daisy-chain structure between the third pin and a first voltage terminal. The plurality of memory chips are configured to respectively generate a plurality of reference voltage periods that divide between a voltage level of the third pin and a voltage level of the first voltage terminal based on the plurality of resistors.

Storage device generating multi-level chip enable signal and operating method thereof

Interface circuit for processing commands, memory device including the same, storage device, and method of operating the memory device

An integrated circuit including first pads and second pads, a first receiver circuit and a first driver circuit respectively connected to the first pad, a second receiver circuit and a second driver circuit respectively connected to the second pad, and a first loopback circuit having a first input terminal electrically connected to the first receiver circuit, a first output terminal electrically connected to the first driver circuit, a second output terminal electrically connected to the second driver circuit, and a second input terminal electrically connected to the second receiver circuit may be provided. At a normal mode, the first loopback circuit electrically connects the first input terminal to the second output terminal and electrically connects the second input terminal to the first output terminal. At a test mode, the first loopback circuit electrically connects the first input terminal to the first output terminal.

Integrated circuit and storage device including integrated circuit

An integrated circuit includes an input/output pad, a driver circuit connected to the input/output pad, and a receiver circuit connected to the input/output pad, and a code generator. The driver circuit is configured to output an output signal to an external device through the input/output pad. The receiver circuit is configured to receive an input signal from the external device through the input/output pad. The code generator is configured to generate a termination code of the external device in response to a signal output from the receiver circuit.

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Seoul, South Korea

Daehoon Na