Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Daehong Eom

Kyunghyun Kim

Se-Ho Cha

JinGyun Kim

Jun-Youl Yang

Hoon Hee Han

Woong Hee Lee

Kyounghwan Kim

Phil Ouk Nam

Yongsun Ko

Jihoon Jeong

Dongchul Yoo

Woosung Lee

Junkyu Yang

Sang Won Bae

Jinuk Lee

ChangSup Mun

Jaewan Park

Junghun Lim

Byoungmoon Yoon

Seonghwan Park

Chanjin Jeong

Yanghwa Lee

Kihyun Hwang

Sung-Jun Kim

Young-Hoo Kim

Daehyun Jang

Sunghae Lee

Kwangsu Kim

Chadong Yeo

Changki Hong

Young-taek Hong

Imsoo Park

Seongsoo Lee

Jaedong Lee

Young Taek Hong

Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial layers is formed. The cutting region is filled with a non sacrificial layer. The insulating layers and the sacrificial layers are patterned to form a mold pattern. The mold pattern includes insulating patterns, sacrificial patterns, and the non sacrificial layer in the cutting region. The sacrificial patterns may be replaced with electrodes. The related semiconductor memory device is also provided.

Methods of fabricating three-dimensional semiconductor devices

A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.

Three-dimensional semiconductor memory device and method for fabricating the same

Three-dimensional semiconductor memory device

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

Three dimensional semiconductor memory devices and methods of fabricating the same

A mold stack including alternating insulation layers and sacrificial layers is formed on a substrate. Vertical channel regions extending through the insulation layers and sacrificial layers of the mold stack are formed. Gate electrodes are formed between adjacent ones of the insulation layers and surrounding the vertical channel regions. The gate electrodes have a greater thickness at a first location near sidewalls of the insulation layers than at a second location further away from the sidewalls of the insulation layers.

Vertical channel memory devices with nonuniform gate electrodes and methods of fabricating the same

Vertical channel memory devices with nonuniform gate electrodes

A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method

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Daehong Eom