Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Gachon University of Industry-Academic Cooperation Foundation

Daeho Lee

Dongkyu Seo

Byungseok Lee

Junyong Shin

Yeongrong Park

Kilsoo Kim

Dongkyu Kim

Seokhyun Lee

Youngmin Kim

Yongseok Kim

Byeongwook Yoo

Taeje Cho

Dong-Hun Lee

Haeil Park

Wonjong Kim

Jaejin Lyu

Seokgyu Yoon

Jinhyun Kim

Kyungkyu Kim

Junhan Lee

Woonbae Kim

MinJung Kim

Taewon Yoo

Hyeongpil Kim

Hyoyeon Kim

Wansoo Park

Jungpil Lee

Junghee An

Nam Binh Vu

Joonsung Choi

Chulhee Park

Minoh Kim

An electronic device includes a motion sensor, an image signal processor core, an image stabilizer, and an image size controller. The motion sensor generates camera motion data by sensing motion of a camera module that captures an image to generate an original frame image. The image signal processor core generates processed frame image by processing input frame image corresponding to the original frame image. The image stabilizer generates an output frame image by performing electronic image stabilization of the processed frame image. The image size controller estimates a motion level indicating a degree of camera motion of the camera module based on the camera motion data and control a size of the input frame image or a size of the output frame image based on the motion level. The image stabilization is efficiently performed by estimating camera motion and adjusting the image size according to the camera motion.

Method of image stabilization and electronic device performing the same

A semiconductor package including a substrate including a through hole, an image sensor structure on the substrate, and a first transparent substrate on the substrate and spaced apart from the image sensor structure may be provided. The image sensor structure includes a logic chip on the substrate, a first sensing chip on an active surface of the logic chip, and a second sensing chip on an inactive surface of the logic chip and connected to the active surface of the logic chip through a first via that vertically penetrates the logic chip. On a bottom surface of the logic chip, at least a portion of one of the first sensing chip and the second sensing chip is in the through hole.

Semiconductor package including stack structure of logic chip and sensing chips

An image sensor includes a sensing unit configured to generate a plurality of images having different exposure times for a same object, a pre-processor configured to generate a merged image by merging the plurality of images, an interface circuit configured to output at least one of the plurality of images and/or the merged image to an external processor, and a controller configured to control the pre-processor to selectively generate the merged image based on information of the plurality of images.

Image sensor including internal pre-processor configured to generate a merged image, image processing system including the same, and image processing method

A semiconductor package includes a lower semiconductor chip disposed on a lower redistribution substrate, lower solder patterns disposed between the lower redistribution substrate and the lower semiconductor chip, conductive structures disposed on the lower redistribution substrate, a lower molding layer disposed on the lower redistribution substrate and covering a top surface of the lower semiconductor chip, an upper redistribution substrate disposed on the lower molding layer and electrically connected to the conductive structures, an upper semiconductor chip disposed on the upper redistribution substrate, upper solder patterns disposed between the upper redistribution substrate and the upper semiconductor chip, and an upper molding layer disposed on the upper redistribution substrate and covering a sidewall of the upper semiconductor chip. The number of the conductive structures is greater than that of chip pads of the upper semiconductor chip.

Semiconductor package including redistribution substrate

A stacked-chip package of the inventive concepts includes a first chip and a second chip stacked on the first chip. The first chip may include a first cell array region, a first core circuit region including a first core terminal, and a first peripheral circuit region including a plurality of first peripheral circuit terminals. The second chip may include a second cell array region on the first cell array region, a second core circuit region on the first core circuit region and including a second core terminal, and a through via on the first peripheral circuit region and connected to at least one first peripheral circuit terminal of the plurality of first peripheral circuit terminals.

Stacked-chip packages

An organic photodetector includes: a first electrode; a second electrode facing the first electrode; an activation layer between the first electrode and the second electrode; a hole injection layer between the first electrode and the activation layer; and a hole transport layer between the hole injection layer and the activation layer, wherein the hole transport layer includes: a first hole transport layer including a p-dopant; and a second hole transport layer not including a p-dopant.

Organic photodetector and electronic device including the same

A semiconductor package includes a lower redistribution layer having a plurality of lower ball pads forming a plurality of lower ball pad groups, a semiconductor chip on the lower redistribution layer, an expanded layer surrounding the semiconductor chip on the lower redistribution layer, and an upper redistribution layer on the semiconductor chip and the expanded layer and having a plurality of upper ball pads forming a plurality of upper ball pad groups. The number of the plurality of upper ball pad groups may be the same as the number of the of the plurality lower ball pad groups. Each of the upper ball pads in one of the plurality of upper ball pad groups, from among the plurality of upper ball pads, may be a dummy ball pad.

Semiconductor package and stacked package module including the same

An organic light-emitting diode includes: a first electrode and a second electrode facing each other; an organic emission layer between the first electrode and the second electrode; and a hole injection layer between the first electrode and the organic emission layer, wherein the hole injection layer includes a second metal compound layer and a second metal layer, the second metal compound layer being between the first electrode and the organic emission layer, and the second metal layer being between the second metal compound layer and the organic emission layer.

Organic light-emitting diode and method of manufacturing the same

A semiconductor package includes a first redistribution substrate, a first semiconductor chip disposed on the first redistribution substrate, a first mold layer that covers the first semiconductor chip and the first redistribution substrate, a second redistribution substrate disposed on the first mold layer, a second semiconductor chip disposed on the second redistribution substrate, where the second semiconductor chip includes a second-chip first conductive bump that does not overlap the first semiconductor chip, a first sidewall that overlaps the first semiconductor chip, and a second sidewall that does not overlap the first semiconductor chip, wherein the first sidewall and the second sidewall are opposite to each other, and a first mold via that penetrates the first mold layer connects the second-chip first conductive bump to the first redistribution substrate, and overlaps the second-chip first conductive bump.

Semiconductor package

Stacked-chip packages having through vias

Organic light-emitting diode including a hole injection layer, and method of manufacturing the same

An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode, each emission unit including at least one emission layer; and m&#x2212;1 charge generating layers respectively located between two adjacent emission units among them emission units, each of the charge generating layers including one n-type charge generating region and one p-type charge generating region, wherein m is an integer of 2 or more, and at least one of the m&#x2212;1 p-type charge generating regions includes a phosphate-containing compound.

Organic light-emitting device

The present invention relates to a metal oxide nanoparticle ink composition, a method of producing the same, and a method of forming a conductive layer pattern by using the metal oxide nanoparticle ink composition, and more particularly, to a metal oxide nanoparticle ink composition for forming a conductive layer by irradiating an ink composition thin film containing nickel oxide nanoparticles with a sintering laser, a method of producing the same, and a method of forming a conductive layer pattern by using the metal oxide nanoparticle ink composition.

Metal oxide nanoparticle ink composition, method of producing same, and method of forming conductive layer pattern using same

A display device includes: a display substrate; an opposing substrate opposing the display substrate; and a light amount control layer disposed between the display substrate and the opposing substrate. The display substrate includes: a first substrate; a thin film transistor o disposed n the first substrate; and a pixel electrode connected to the thin film transistor. The opposing substrate includes: a second substrate; a color conversion layer disposed on the second substrate; and a first polarizer disposed on the color conversion layer. The first polarizer includes: a base substrate; and a linear polarizer disposed on one surface of the base substrate. The first polarizer opposes the pixel electrode. The one surface of the base substrate on which the linear polarizer is disposed has a flatness of about 60 nm or less.

Display device and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Daeho Lee