Samsung Electronics Co., Ltd.

Daeeun Jeong

Yoonjong Song

Kilho Lee

Yong Kwan Kim

Kyungtae Nam

Kiseok Suh

Seung Pil Ko

Shinhee Han

Minkwan Kim

Hyunsung Jung

A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer including an amorphous material, forming a lower electrode layer on the first blocking layer, and forming a magnetic tunnel junction structure layer on the lower electrode layer.

Methods of manufacturing magnetoresistive random access memory device

Disclosed are a magnetic memory device and a method of fabricating the same. The magnetic memory device comprises a bottom electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on the bottom electrode, and a top electrode on the magnetic tunnel junction pattern. The bottom electrode comprises a first bottom electrode and a second bottom electrode on the first bottom electrode. Each of the first and second bottom electrodes comprises metal nitride. The first bottom electrode has a crystallinity higher than that of the second bottom electrode.

Magnetic memory device and method of fabricating the same

A device, which may include a semiconductor device, may include a contact plug, a first barrier metal covering a bottom surface of the contact plug and a lower sidewall of the contact plug, such that the first barrier metal exposes an upper sidewall of the contact plug, and an insulation pattern covering the upper sidewall of the contact plug such that the insulation pattern isolates the first barrier metal from exposure. A magnetic tunnel junction pattern may cover a top surface of the contact plug. Each element of the contact plug, the first barrier metal, and the insulation pattern may be in a contact hole of a first interlayer dielectric layer.

Semiconductor devices and methods of fabricating the same

A device that includes a magnetic memory device, includes a magnetic tunnel junction pattern on a substrate and a mask structure on the magnetic tunnel junction pattern. The mask structure includes a conductive pattern and a sacrificial pattern, where the conductive pattern is between the magnetic tunnel junction pattern and the sacrificial pattern, and the sacrificial pattern includes a material having an etch selectivity with respect to the conductive pattern. The device includes an upper contact plug in contact with a surface of the conductive pattern of the mask structure. The device includes a lower interlayered insulating layer covering a cell region and a peripheral circuit region of the substrate, where the lower interlayered insulating layer on the cell region has a recessed top surface between adjacent magnetic tunnel junction patterns.

Magnetic memory devices

A semiconductor memory device includes a memory cell including a memory magnetic tunnel junction (MTJ) configured to be coupled to a first sensing node and a reference cell including a first resistance element and a second resistance element configured to be coupled in parallel to a second sensing node, the first resistance element including a first number of reference MTJs and the second resistance element including a second number of reference MTJs different from the first number of reference MTJs. The memory device further includes a sensing circuit configured to be coupled to the first and second sensing nodes and to detect a difference in resistance between the memory cell and the reference cell. In some embodiments, the first number of reference MTJs includes first reference MTJs connected in series and the second number of reference MTJs includes second reference MTJs connected in series.

Magnetic memory devices having memory cells and reference cells with different configurations

Disclosed is a method for manufacturing a magnetic memory device. The method for manufacturing a magnetic memory device comprises sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a boron absorption layer on the second magnetic layer, sequentially forming a metal capping layer and an oxygen donor layer on the boron absorption layer, and performing a heat treatment process to diffuse at least a portion of oxygen atoms included in the oxygen donor layer into the metal capping layer and the boron absorption layer. The metal capping layer has a greater oxygen diffusivity than the oxygen donor layer.

Methods for manufacturing magnetic memory devices

Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface of the vertical portion. In the lower electrode, the vertical portion has a top surface higher than the horizontal portion and has a top surface including at least two parallel sides and other side at an angle thereto. The MTJ may be provided on the vertical portion of the lower electrode.

Growing community of inventors

Yongin-si, South Korea

Daeeun Jeong