Samsung Electronics Co., Ltd.

Dae-young Kwak

Seung-Jae Lee

Myeong-Cheol Kim

Sang-Bom Kang

Yong-Ho Jeon

Jung-Chan Lee

Jin-wook Lee

Sang-jin Hyun

Min-chan Gwak

Ji-ye Kim

Jung-hwan Chun

Dong-hyun Roh

An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Integrated circuit device having fin-type active

A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Semiconductor device

Transistor structure of a semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Dae-young Kwak