Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Dae Young Chung

Eun Joo Jang

Tae Hyung Kim

Moon Gyu Han

Hongkyu Seo

Tae Ho Kim

Kwanghee Kim

Oul Cho

Yuho Won

Sung Woo Kim

Ha Il Kwon

Kun Su Park

Sujin Park

Heejae Lee

Hyun A Kang

Jaejun Chang

Takahiro Fujiyama

Won Sik Yoon

Fumiaki Kato

Masashi Tsuji

Hyo Sook Jang

Sang Jin Lee

Chan Su Kim

Yusaku Konishi

Naotoshi Suganuma

Soonmin Cha

Jeong Hee Lee

Yun Sung Woo

Yeonkyung Lee

Shin Ae Jun

Jin A Kim

Yong Wook Kim

Yong Seok Han

Norihito Ishii

Jae Jin Park

Takao Motoyama

Keigo Furuta

Hee Chang Hwang

Hee Jae Lee

Taehyung Kim

Shang Hyeun Park

Seung Hoon Lee

Jihyun Min

Ju Hyun Kim

Taekhoon Kim

Jooyeon Ahn

Tae-ho Kim

Kwang Hee Kim

Dae-hee Lee

Hyun Bum Kang

Tomoyuki Kikuchi

Young Seok Park

Jhun Mo Son

Chil Hee Chung

Min Chul Lee

Hwea Yoon Kim

Su Jin Park

O Hyun Kwon

Hongku Seo

A copolymer including a structural unit represented by Chemical Formula 1 wherein the copolymer is capable of improving luminous efficiency and durability, particularly, an improvement in luminescence life-span, of an electroluminescence device, particularly a quantum dot electroluminescence device.

Copolymer, electroluminescence device material including copolymer, and electroluminescence device

Disclosed is a copolymer including a structural unit represented by Chemical Formula 1 capable of improving performance (particularly durability) of an electroluminescent device.

Copolymer, electroluminescent device material including copolymer, and electroluminescent device

A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.

Quantum dot device and electronic device

A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

Quantum dot light emitting device with electron auxiliary layer and display device including the same

A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R, R, R, X, X, and Arare as provided herein.

Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Semiconductor nanocrystal particles and devices including the same

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Electroluminescent device, and display device comprising thereof

An arylamine-fluorene alternating copolymer having a structural unit (A) is represented by Chemical Formula (1): wherein Chemical Formula (1) is the same as described in the detailed description.

Arylamine-fluorene alternating copolymer, electroluminescence device material, and electroluminescence device using the polymer

A copolymer having a structural unit represented by Chemical Formula 1 is provided. The copolymer may improve performance, e.g., luminous efficiency, of an electroluminescence device. In Chemical Formula 1, the definition of each substituent is as described in the detailed description.

A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

Light emitting device, method of manufacturing the same, and display device

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.

Quantum dot device and display device

An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

Growing community of inventors

Suwon-si, South Korea

Dae Young Chung