Asm IP Holding B.v.

Electronics and Telecommunications Research Institute

Asm Genitech Korea Ltd.

Other

Dae Youn Kim

Hyun Soo Jang

Young Hoon Kim

Jeong Ho Lee

Yong Gyu Han

Cheon Soo Kim

Seung Seob Lee

Kyu Hwang Lee

Seung Woo Choi

Herbert Terhorst

Jin Hyoung Lee

Wonyong Koh

Tae Hee Yoo

Woo Chan Kim

Sang Jin Jeong

Hyung-Sang Park

Izumi Arai

Hak Joo Lee

Wan Gyu Lim

Sang-Jin Jeong

Hyung Wook Noh

Sang Wook Lee

Kyung Il Hong

Jin Geun Yu

Soo Hyun Kim

Hie Chul Kim

Jin Ho Lee

Young Seok Choi

Yong Min Yoo

Min Young Park

Sang Don Lee

Ki Jong Kim

Jong Won Shon

Jeong Jun Woo

Seung Wook Kim

Hak Yong Kwon

Jae Hyun Kim

Jin Seok Park

A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Gas supply unit and substrate processing apparatus including the gas supply unit

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

Substrate processing apparatus

A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Method of depositing thin film and method of manufacturing semiconductor device

A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

Thin film deposition apparatus

Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m&#xd7;n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Method of depositing thin film

Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining ato athat are cycles of a first processing condition to an n-th processing condition so that a value of |T&#x2212;(a&#xd7;G+a&#xd7;G+ . . . +a&#xd7;G)| is less than a minimum value among G, G, . . . , and G, where n is 2 or greater integer, G, . . . , and Grespectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Method of forming thin film

An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.

Exhaust apparatus and substrate processing apparatus having an exhaust line with a first ring having at least one hole on a lateral side thereof placed in the exhaust line

Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.

Semiconductor manufacturing system including deposition apparatus

A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

Deposition apparatus and deposition system having the same

Growing community of inventors

Daejeon, South Korea

Dae Youn Kim