Electronics and Telecommunications Research Institute

Industry-university Cooperation Foundation Sunmoon University

Dae Yong Kim

Sang Kuk Choi

Jin Woo Jeong

Dae Jun Kim

Ho Seob Kim

Hyun Tak Kim

Sang Soo Choi

Hai Bin Chung

Doh Hoon Kim

Kag Hyeon Lee

Dong Yel Kang

Jong Hyun Lee

Hyun Kyu Yu

Chang Auck Choi

Min Sang Park

Cheon Soo Kim

Won Ick Jang

Eul Gyoon Lim

Changsoo Kwak

Chung Hwan Kim

Jim Hee Lee

Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.

Vacuum channel transistor and manufacturing method thereof

Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.

Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor

Provided is a micro stage comprising: a body having a vertically perforated through-hole passing through a central portion thereof; a bobbin including a tip portion with an electron emission tip embedded in the center thereof, and passing through the through-hole of the body to be moved in the through-hole along a first axis perpendicular to a vertical direction; a first piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in one direction along the first axis; a second piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in the other direction along the first axis; and an upper cover that is coupled to an upper portion of the body and has a through-hole, through which the bobbin passes and communicates with the through-hole of the body, wherein the bobbin can be positioned as desired along the first axis by adjusting the voltages applied to the first piezoelectric element and the second piezoelectric element. Accordingly, the emission tip can be exactly and stably positioned using only the movable piezoelectric elements.

Micro stage using piezoelectric element

Provided is a wafer-scale microcolumn array using a low temperature co-fired ceramic (LTCC) substrate. The microcolumn array includes a LTCC substrate having wirings and wafer-scale beam deflector arrays, which are attached to at least one side of the LTCC substrate and has an array of deflection devices deflecting electron beams. The wafer-scale microcolumn array using the LTCC substrate makes it possible to significantly increase the throughput of semiconductor wafers, simplify its manufacturing process, and lower its production cost.

Wafer-scale microcolumn array using low temperature co-fired ceramic substrate

A micro column electron beam apparatus having a reduced number of interconnections is provided. The micro column electron beam apparatus includes: a low temperature co-fired ceramic (LTCC) substrate; a plurality of deflector electrodes attached to a predetermined top portion of the LTCC substrate; a pad electrode placed at a top edge of the LTCC substrate and transmitting an external signal to the deflector electrodes; and a connection unit placed in the LTCC substrate and electrically connecting the deflector electrode and the pad electrode.

Micro column electron beam apparatus formed in low temperature co-fired ceramic substrate

Provided is a micro-column electron beam apparatus including: a base; an electron lens bracket on which an electron lens module can be fixed, mounted in a central portion of the base; an electron beam source tip module vertically disposed on the electron lens module; a pan spring plate stage module that is mounted over the base, supports the electron beam source tip module at a central portion thereof, and includes a three-coupling pan spring plate portion including first through third spring units that are coupled to the electron beam source tip module in three directions on a plane perpendicular to the vertical axis, which vertically passes the center of the electron beam source tip module, to elastically support the electron beam source tip module in three directions; a first piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a first axis perpendicular to the vertical axis; and a second piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a second axis perpendicular to the vertical axis and the first axis.

Micro-column electron beam apparatus

Provided is an electron beam lens for a micro-column electron beam apparatus and a method of manufacturing the same. A photosensitive glass substrate is used as a base isolation substrate and a thin metal film is grown by a plating method. Holes through which electron beam passes are formed by a lift off method after forming a resist pattern shaped as a hole on a seed metal layer and plating the thin metal film.

Electron beam lens for micro-column electron beam apparatus and method of fabricating the same

The present invention relates to a deflector of a micro-column electron beam apparatus and method for fabricating the same, which forms a seed metal layer and a mask layer on both sides of a substrate, and exposes some of the seed metal layer on which deflecting plates, wirings and pads are to be formed by lithography process using a predetermined mask. The wirings and pads are formed by plating metal on the exposed portion, and some of the metal layer is also exposed on which the deflecting plates are to be formed using a predetermined mask, and then the metal is plated with desired thickness, thereby the deflecting plates are completed. Therefore, by forming plurality of deflecting plates on both sides of the substrate at the same time through plating process, alignment between the deflecting plates formed on both sides of the substrate can be exactly made, and by fabricating a deflector integrated with the substrate and deflecting plates in a batch process, productivity and reproducibility is improved. In addition, since the deflecting plates, wirings and pads are directly formed on the substrate, structural safety is improved and thereby durability is also improved.

Deflector of a micro-column electron beam apparatus and method for fabricating the same

An apparatus for measuring a gap between a mask and a substrate and a method thereof are provided. The apparatus includes a laser displacement sensor, which is placed on a mask and a substrate spaced apart from each other by a predetermined gap, emits laser beams while moving onto the mask and the substrate in a horizontal direction and measures a gap between the mask and the substrate using a variation in distance values measured based on light-receiving positions of the laser beams that are reflected from the mask and the substrate and return to their original positions, respectively.

Apparatus for measuring gap between mask and substrate using laser displacement sensor, and method thereof

A method of fabricating a resist pattern for a gamma gate of high electron mobility transistors of gallium arsenide (GaAs) elements for high-speed data communication with low noise is disclosed. The method of fabricating the gamma gate according to the present invention includes the steps of forming a first resist pattern by coating a first resist on a GaAs substrate, and exposing, developing and baking the coated first resist, sequentially; and forming a second resist pattern by coating a second resist on the GaAs substrate and the first resist pattern. and exposing, developing and baking the coated second resist, sequentially. A portion of the GaAs substrate covered by the first and the second resist patterns defines a region that a footprint of the gamma gate is formed, and a portion of the GaAs substrate which is covered by the first resist pattern, but not covered by the second resist pattern defines a region that a head of the gamma gate is formed.

Structure and process method of gamma gate for HEMT

The present invention provides an optical system for crystallization tool for producing an crystallized silicon thin film by using an excimer laser as a light source to crystallize an amorphous silicon thin film through a fine stripped pattern, including 1st to 10th lenses sequentially arranged along an optical axis from said excimer laser, wherein the 1st lens having both side made convex; the 2nd lens having one side made convex toward the light source and the other side concave; the 3rd lens having one side made convex toward the light source and the other side concave; the 4th lens having both side concave; the 5th lens having both side made convex; the 6th lens having one side concave toward the light source and the other side made convex; the 7th lens having one side made convex toward the light source and the other side concave; the 8th lens having both side made convex; the 9th lens having one side made convex toward the light source and the other side concave; and the 10th lens having both side made convex.

Optical system for crystallization tool

The RF active balun circuit for improving a small-signal linearity in a power amplifying circuit of a CDMA system is provided under the construction of a signal amplifier driven by exterior individual direct current gate power VGG VGG for receiving a communication input signal AC-In and performing a cascode amplification at a normal operation point where a feedback third-order distortion signal becomes large; a distortion signal generator driven by exterior direct current gate power VGG different from the above power, for generating the communication input signal AC-In as the third-order distortion signal by nonlinearity of an active element to cancel the third-order distortion signal amplified in the signal amplifier; and an insulator provided for an insulation from a exterior driving power VGG applied to the distortion signal generator, thereby maintaining the small size, lower power and high efficient terminal characteristics by using a gain based on gate voltage of FET and the nonlinearity characteristic difference, and improving the linearity of an IC operating by a small signal or medium signal.

Growing community of inventors

Daejeon, South Korea

Dae Yong Kim