Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Dae-woo Lee

Sang-woo Kim

Ki-beom Lee

Sam-Young Cho

Jung-Soo Jung

Dae-Gyun Kim

Beom-Sik Bae

Jung-Shin Park

Yong Chang

Sang Gab Kim

Kyung-Joo Suh

Bong-Kyun Kim

Jong-Hyun Choung

Wang Woo Lee

Hong Sick Park

Nae-Hyun Lim

Bong Won Lee

Ji-Young Park

Seon-Il Kim

In-Bae Kim

Jin Seock Kim

Seung Ho Yoon

Jong Hee Park

Young Joo Choi

Jun-Hwan Oh

Jae-Woo Jeong

Young Min Moon

Veronica Kondratieva

Il-Ryong Park

Bong-Yeon Won

A phosphoric acid-free etchant composition and a method of forming a wiring, the composition including about 40 wt % to about 60 wt % of an organic acid compound; about 6 wt % to about 12 wt % of a glycol compound; about 1 wt % to about 10 wt % of nitric acid, sulfuric acid, or hydrochloric acid; about 1 wt % to about 10 wt % of a nitrate salt compound; and water, all wt % being based on a total weight of the phosphoric acid-free etchant composition.

Etchant composition and forming method of wiring using etchant composition

An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

Etching composition, method of forming a metal pattern using the etching composition, and method of manufacturing a display substrate

An etchant composition includes ammonium persulfate (((NH))SO), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Etchant composition and manufacturing method for thin film transistor using the same

A method and an apparatus for supporting a handover in a broadband wireless access communication system are provided. The method includes configuring mapping information based on information related to base station IDs (BS-IDs) and power used in a plurality of sub base station, and transmitting the mapping information to the plurality of femto base stations, and when a handover request is received from a terminal, performing a handover to one of the plurality of femto base stations is set as a target base station.

Method and apparatus for supporting a handover in a broadband wireless access communication system

A handoff method between a source network to which a terminal is connected in order of a Base Station (BS) and an Access Service Network (ASN), and a target network to which the terminal is connected in order of a Packet Data Service Node (PDSN), a Packet Control Function (PCF) and an Access Network (AN). The terminal sends a handoff request message with AN information of the target network to the ASN via the BS. The ASN forwards the handoff request message to the PCF via the PDSN using the AN information. Upon receipt of the handoff request message, the PCF sends a request for session information to the ASN via the PDSN. The PDSN sends a request for context information to the ASN. Upon receipt of the session information request and the context information request, the ASN transfers the context information to the PDSN and transfers the session information to the AN via the PDSN and the PCF.

Handoff method between heterogeneous networks and system thereof

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Seoul, South Korea

Dae-woo Lee