Electronics and Telecommunications Research Institute

Lg Energy Solution, Ltd.

Dae-woo Lee

Sang-gi Kim

Young-Bo Cho

Kyoung-Ik Cho

Jong-Dae Kim

Byoung-Gon Yu

Tae-Moon Roh

Jin-Seok Heo

Yil-Suk Yang

Jin-gun Koo

Jong-dae Kim

Il-yong Park

Tae-moon Roh

Kwang-Seob Kim

An AC power output device includes a switching component connected to each of a plurality of batteries and configured to turn ON or OFF an electrical connection between a corresponding battery and another battery depending on an operational state, a filter component configured to receive an output voltage from the plurality of batteries, to adjust a polarity of the output voltage from the plurality of batteries according to an operational state, and to output the voltage of the adjusted polarity, and a controller configured to control the operational states of the switching component and the filter component so that the AC power is output from the plurality of batteries.

Apparatus for outputting alternating current power source

Provided is a data bus system for a micro controller which has an input/output (I/O) unit, a central processing unit (CPU), an internal memory unit, and a peripheral circuitry. The data bus system includes an external access bus used when data is output from the CPU or data is input to the I/O unit or the internal memory unit; an internal access bus used when data is input to the CPU, data is output from the I/O unit or the internal memory unit, or data is input to or output from the peripheral circuitry; and an internal memory test bus used when data is output from the internal memory unit and input to the I/O unit.

Data bus system for micro controller

A method for manufacturing a trench-gate type power semiconductor device is provided. A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type. A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed. The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere. A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask. A source electrode is formed to be electrically connected to the body contact region, and a drain electrode is formed to be electrically connected to the semiconductor substrate.

Method for manufacturing trench-gate type power semiconductor device

Growing community of inventors

Daejeon, South Korea

Dae-woo Lee