Samsung Electronics Co., Ltd.

Dae-Won Kang

Jung-Ho Lee

Dong-Jun Lee

Jung-Sik Choi

Sang-Mun Chon

Hong-Ki Kim

Sung-Taek Moon

Gi-Hag Lee

A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula &#x2014;(SiHNH)&#x2014; wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula &mdash;(SiH NH) &mdash; wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH NH ) where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.

Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method

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Seoul, South Korea

Dae-Won Kang