Samsung Electronics Co., Ltd.

Dae Won Ha

Keun Hwi Cho

Min-Chul Sun

Jae Young Park

Seung Seok Ha

Young Su Chung

Seung Mo Ha

Jong Min Jeon

Kwang Yong Yang

Dong Hoon Hwang

Hyo Jin Kim

Sung Min Kim

Guk Il An

Jong Hwa Baek

Do Y Choi

Hwi Chan Jun

Chang Hwa Kim

Mun Hyeon Kim

Jin Sung Kim

Sung Il Park

Jung Gun You

Byoung-Gi Kim

Jae Hyun Park

Yun Suk Nam

Kern Rim

Yeong Min Jeon

Min Gyu Kim

Sung Chul Park

Cheol Jin Kim

Jong In Baek

Hyun-Seung Song

Keon Yong Cheon

Musarrat Hasan

Kyoung-Mi Park

Yoon Moon Park

Yoshinao Harada

Sung Chui Park

Dong Woo Han

Young Moon Choi

In Bong Pok

Kab Jin Nam

A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a first active pattern extending in a first direction; a second active pattern spaced apart extending in the first direction, the first active pattern being provided between the second active pattern and a substrate; a gate structure extending in a second direction, the first active pattern and the second active pattern passing through the gate structure, and the second direction crossing the first direction; a first source/drain area connected with the first active pattern and provided on a side of the gate structure; a second source/drain area connected with the second active pattern and provided on the first source/drain area; a first insulating structure provided between the substrate and the first source/drain area, the first insulating structure not being provided between the substrate and the gate structure; and a second insulating structure provided between the first source/drain area and the second source/drain area.

Semiconductor device and method for fabricating the same

A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

Semiconductor memory devices and methods for manufacturing the same

A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Semiconductor device including isolation regions

A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least one side of the gate electrode, a source/drain contact extending into the source/drain region and including a filling layer and a barrier layer along a sidewall of the filling layer, and a silicide layer between the source/drain region and the filling layer, the silicide layer including a first sidewall in contact with the filling layer and a second sidewall in contact with the source/drain region, wherein the barrier layer is not between the filling layer and the source/drain region.

Semiconductor devices and methods for fabricating the same

Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Semiconductor device and a method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device, the method including providing a substrate including a first region and a second region such that the second region is separated from the first region; forming a metal oxide film on the first region of the substrate and the second region of the substrate; forming an upper metal material film on the metal oxide film on the first region of the substrate such that the upper metal material film does not overlap the metal oxide film on the second region of the substrate; and simultaneously annealing the upper metal material film and the metal oxide film to form a ferroelectric insulating film on the first region of the substrate and form a paraelectric insulating film on the second region of the substrate.

Method of manufacturing semiconductor device

A semiconductor device including: a lower semiconductor substrate; an upper semiconductor substrate overlapping the lower semiconductor substrate, the upper semiconductor substrate including a first surface and a second surface opposite to the first surface; an upper gate structure on the first surface of the upper semiconductor substrate; a first interlayer insulation film which covers the upper gate structure, wherein the first interlayer insulation film is between the lower semiconductor substrate and the upper semiconductor substrate; and an upper contact connected to the lower semiconductor substrate, wherein the upper contact is on a side surface of the upper gate structure, wherein the upper contact includes a first portion penetrating the upper semiconductor substrate, and a second portion having a side surface adjacent to the side surface of the upper gate structure, and a width of the first portion decreases toward the second surface.

Semiconductor device including an upper contact in contact with a side surface of an upper gate structure

A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.

Semiconductor device

A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.

Semiconductor device and method of fabricating the same

A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

Semiconductor device including contact structure

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Seoul, South Korea

Dae Won Ha