Samsung Electronics Co., Ltd.

Dae-sung Song

Young-Gu Jin

Byoung-ho Cheong

Tak Soo Kim

Jong-Sun Lim

An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linearly with a slope with the content change of predetermined components while an energy bandgap between the conduction band energy and the valence band energy is maintained at a predetermined value; and two barrier layers, one of which is positioned on an upper surface of the active layer and the other is positioned on a lower surface of the active layer, and which are made of a Group III-V semiconductor compound and have higher conduction band energy and lower valence band energy than the active layer. A driving voltage is decreased and luminous efficiency and reliability are enhanced.

Optical device with quantum well

A method of fabricating a one-way transparent optical system designed to transmit almost 100% of internal light while effectively blocking radiation of external light. The method includes: forming bead-shaped light absorbing elements; dispersing the light absorbing elements over a soft transparent film; and curing the soft transparent film to fix the dispersed light absorbing elements onto the transparent film.

Method of fabricating one-way transparent optical system

A laser diode is provided. The laser diode has a structure in which reflective index of an n-cladding layer formed on a first face of the active layer is higher than that of a p-cladding layer formed on a second face. This asymmetric waveguide structure suppresses extension of field into the p-cladding layer thus reducing free carrier absorption in the p-cladding layer.

Growing community of inventors

Gyeonggi-do, South Korea

Dae-sung Song