Lg Innotek Co., Ltd.

Coupang, Corporation

Dae Sung Kang

Hyo Kun Son

Myung Hoon Jung

Sung Hoon Jung

Myung Sun Cha

Hwan Hee Jeong

Sang Youl Lee

June O Song

Kwang Ki Choi

Ji Hyung Moon

Jin Soo Park

Hyung Jo Park

Ho Sang Yoon

Rak Jun Choi

Sang Hoon Han

Young Hun Han

Jung Min Won

Sung Jin Son

Embodiments of the present disclosure include computer-implemented systems and methods for routing incoming customer requests or inquiries in a customer service center. The system may include at least one processor configured to execute instructions to perform steps. The steps may include receiving a plurality of incoming customer calls and a plurality of incoming customer chat sessions. The steps may include blending the received plurality of customer calls and the received plurality of customer chat sessions into a total queue for presentation to at least one user device. The steps may additionally include determining a respective priority for each of the blended plurality of customer calls and the blended plurality of customer chat sessions and sending, based on the determined priority, to the at least one user device at least one of the blended plurality of customer calls or the blended plurality of customer chat sessions.

Incoming request blending for customer service representatives

A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface to extend beyond one of the first surface or second surface of the first semiconductor layer. A light emitting device may also be formed with a buffer layer that includes a stepped portion, and a light emitting device package and system may be formed from the light emitting devices.

Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer.

Semiconductor light emitting device having a plurality of semiconductor layers having P-type dopant

Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

Light emitting device and method for manufacturing the same

A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.

Nitride semiconductor light-emitting device

Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Semiconductor light emitting device and method of manufacturing the same

A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer.

Light-emitting device

Provided are a light emitting device and a light emitting device package comprising the same. The light emitting device comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer. The active layer is formed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. Here, at least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer has current spreading structures comprising a pair of a first conductive layer and a second conductive layer and is disposed in a sequence of the second conductive layer and the first conductive layer from the active layer.

Light emitting device and light emitting device package including the same

Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.

Light emitting device, light emitting device package

A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

Light emitting device and light emitting device package having the same

Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.

Provided is a light emitting device according to one embodiment including: a substrate which has protrusions on the C-face, and of which unit cells are constructed in a hexagonal structure; a semiconductor layer which is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and a light emitting structure layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and second conductive semiconductor layer which are formed on the semiconductor layer, wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces.

Growing community of inventors

Gwangju, South Korea

Dae Sung Kang