Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Dae Suk Lee

Sang Jun Park

Eun Ji Kim

Sung Dong Cho

Hak Seung Lee

Dong Chan Lim

Kwang Wuk Park

Ha Ryong Hong

Sung Eun Cho

Dae Seong Jeon

Chan Gwang An

Hyun Sam Mun

A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Semiconductor device including TSV and method of manufacturing the same

There is provided an antenna pattern frame including: a radiator including an antenna pattern part transmitting and receiving signals and a connection terminal part electrically connecting the antenna pattern part and a circuit board to each other; and a radiator frame provided by performing injection molding on the radiator while allowing the antenna pattern part to be exposed to one surface thereof and allowing the connection terminal part to be exposed to the other surface thereof, wherein the antenna pattern part is provided with a support part protruding outwardly from the antenna pattern part and bent in a direction toward the radiator frame to be disposed inwardly of the radiator frame.

Antenna pattern frame and electronic device including the same

Growing community of inventors

Suwon-si, South Korea

Dae Suk Lee