Skhynix Inc.

Other

Hydis Technologies Co., Ltd.

Dae Suk Kim

Jae Il Kim

Jin Ho Jeong

Munseon Jang

Mun Seon Jang

Hong Jung Kim

Dong Uk Lee

Kyung Whan Kim

Ki Hun Kwon

Sang Jin Byeon

Jong Chern Lee

Dong Kyun Kim

Hoiju Chung

Suk Hwan Choi

Young Jun Ku

Hyoung Jun Park

Jeong Jun Lee

A Ram Rim

Byung Ho Yae

Yoon Seok Choi

Sang Woo Yoon

Eung Bo Shim

Hoi Ju Chung

Cheol Hwan Lee

Chan H Yoo

Seoung Hyun Kang

A memory device includes a memory cell area including a plurality of cell blocks divided into a plurality of normal cell blocks, at least one ECC cell block, and at least one redundancy cell block, the plurality of cell blocks being configured to output data and error correction codes; an error correction circuit configured to generate error-corrected data by correcting errors in the data using the error correction codes; a first switch group configured to output the error-corrected data while performing, according to first repair control information, a shifting operation on the error-corrected data; and a second switch group configured to transfer the data from the memory cell area to the error correction circuit while performing, according to second repair control information, a zero-padding operation on the data output from one of the cell blocks.

Memory device including error correction device

A semiconductor module includes an address control circuit configured to generate an internal address based on an address in a first read operation and a second read operation that are sequentially performed and configured to generate multiple decoding enable signals and an error information enable signal, a memory circuit including multiple mats and configured to output internal data based on the internal address and the multiple decoding enable signals in the first read operation and configured to output internal meta data and second internal parities based on the internal address and the multiple decoding enable signals in the second read operation, and an error information storage circuit configured to output first internal parities based on the internal address and the error information enable signal in the first read operation.

Semiconductor module for performing error correction operation

A memory includes a first check matrix calculation circuit configured to generate a first parity based on a group indicator portion of a check matrix and write data; a memory core including cell regions configured to store therein the write data and the first parity, neighboring ones of the cell regions sharing one or more sub-word line drivers; a first syndrome calculation circuit configured to generate a first syndrome based on the first parity read from the memory core and a first result of calculating the group indicator portion and data read from the memory core; and a failure determination circuit configured to detect, for each row of the memory core, a defective one of the sub-word line drivers based on the first syndrome.

Memory and operation method of memory

Disclosed is an operating method of a memory, and the operating method may include reading, from selected memory cells included in the memory, codewords including data and an error correction code; detecting errors in the codewords; correcting the errors in the codewords; re-writing the error-corrected codewords to the selected memory cells; re-reading the re-written error-corrected codewords from the selected memory cells; and determining whether the errors are permanent errors in response to a determination that an error is present in the re-read error-corrected codewords.

Memory including error correction circuit and operating method thereof

An error processing circuit includes: a first H matrix calculation circuit configured to calculate a first H matrix and upstream data to generate a partial first parity, during an encoding operation; a second H matrix calculation circuit configured to calculate a second H matrix and the upstream data to generate a second parity, during the encoding operation; and a parity calculation circuit configured to sum the partial first parity and the second parity to generate a first parity, during the encoding operation.

Error processing circuit, memory and operation method of the memory

A memory device includes a plurality of first cell blocks configured to store first data; a second cell block configured to store second data; a third cell block configured to store third data; a repair information storage circuit configured to output, based on repair information stored therein, a repair use signal corresponding to an input address; and an error correction circuit configured to: receive the second data as a first error correction code from the second cell block while selectively receiving, according to the repair use signal, the third data as a second error correction code from the third cell block, and correct errors in the first data from the first cell blocks using the first and second error correction codes.

A memory includes a first check matrix calculation circuit suitable for generating a first parity by calculating a group indicator portion of a check matrix and a write data; a memory core suitable for storing the write data and the first parity; a first syndrome calculation circuit suitable for generating a first syndrome by adding the first parity which is read from the memory core to a first calculation result obtained by calculating the group indicator portion and the data which is read from the memory core; and a failure determination circuit suitable for accumulating the first syndromes for a region of the memory core to generate a vector and determining a presence of a failure of the region based on the vector.

A method for operating a memory includes: performing an error check operation on first memory cells; performing an error check operation on second memory cells; detecting an error which is equal to or greater than a threshold value in a region including the first memory cells and the second memory cells; classifying the region as a bad region in response to the detection of an error which is equal to or greater than the threshold value; and performing an error check operation on the first memory cells and the second memory cells again in response to the classification of the bad region.

Memory and operation method of the same

An electronic device includes a core circuit configured to store write data and a write parity after outputting read data and a read parity in a data masking operation. The electronic device also includes an error correction circuit configured to correct an error included in the read data, based on the read parity; generate the write parity from the error-corrected read data, input data, and masking data; and generate the write data from the error-uncorrected read data, the input data, and the masking data.

Electronic device for performing data masking operation

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to enable a start signal and an oscillation signal based on the reset signal. The oscillation signal starts to oscillate in response to the reset signal.

Semiconductor memory device with power down operation

Semiconductor memory system and semiconductor memory device, which can be remotely initialized

A semiconductor device includes a period signal generation circuit and an interruption signal generation circuit. The period signal generation circuit generates a period signal in response to a refresh pulse and an end pulse. The interruption signal generation circuit generates an interruption signal for controlling an operation that an address is set as a target address, if the address having the same logic level combination as the target address is inputted while the period signal is enabled.

Semiconductor device

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.

Semiconductor devices and semiconductor systems

An input circuit of a semiconductor apparatus may include a first input buffer configured to receive a signal through a test input terminal and to output a first input signal, a second input buffer configured to receive a signal through a normal input terminal and to output a second input signal. The input circuit of the semiconductor apparatus may include a switching unit configured to transfer the signal inputted through the test input terminal to the second input buffer according to a test mode signal. The input circuit of the semiconductor apparatus may include a comparison unit configured to compare the first input signal with the second input signal and to generate a comparison signal, and a storage unit configured to store the comparison signal.

Input circuit of three-dimensional semiconductor apparatus capable of enabling testing and direct access

A semiconductor apparatus may include a fuse cell array, an address generation circuit, a control circuit, and a command generation circuit. The fuse cell array may store a fail address. The address generation circuit may generate a copy address according to test information containing the fail address. The control circuit may control a repair operation including enabling a copy start signal according to the test information and storing the fail address in the fuse cell array according to a copy done signal. The command generation circuit may generate an address and a plurality of commands for a data copy operation according to the copy start signal and enable the copy done signal when the data copy operation is completed.

Growing community of inventors

Icheon-si, South Korea

Dae Suk Kim