Industry-University Cooperation Foundation Hanyang University

Dae Seong Woo

Dong Won Kim

Jea Gun Park

Hea Jee Kim

Sang Hong Park

Sung Mok Jung

Soo Min Jin

Dong Eon Kim

A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Selector and memory device using the same

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Seoul, South Korea

Dae Seong Woo