Wonik Ips Co., Ltd.

Dae Seong Lee

Won Jun Jang

Hyeon Beom Gwon

Joo Suop Kim

Chang Hun Kim

Ah Young Hwang

Jin Seo Kim

Sang Rok Nam

Hae Jin Ahn

Won Sik Ahn

The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S) of raising a pressure inside a chamber to a first pressure (P) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P) to a second pressure (P) after the pressurizing operation (S). The pressurizing operation (S) and the depressurizing operation (S) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Internal chamber processing method and substrate processing method

The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate. An embodiment of a substrate processing method according to the present disclosure comprises the steps of: carrying a substrate into a first chamber; a first pressurizing step increasing the pressure in the first chamber so that the pressure in the first chamber reaches a first high-pressure that is higher than the normal pressure; a first depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a second high-pressure that is lower than the first high-pressure and equal to or higher than the normal pressure; a first pressurizing/depressurizing repeating step performing the first pressurizing step and the first depressurizing step repeatedly at a predetermined number of times; and a second depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a first low-pressure that is lower than the normal pressure.

Method of processing substrate

Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P) to a second pressure (P) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P), which is greater than the atmospheric pressure, to a seventh pressure (P); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T) to the second temperature (T) is performed from a preset temperature raising start point (t) to a preset temperature raising end point (t) while the pressurizing operation is performed or after the pressurizing operation is performed.

Substrate processing method

The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.

Growing community of inventors

Dongducheon-si, South Korea

Dae Seong Lee