Skhynix Inc.

Dae Seok Shin

Seung Gu Ji

Dong Jae Shin

Yong Il Jung

Dong Hwan Kim

A storage device may determine a target memory block from among a plurality of memory blocks, determine a target memory unit from among the plurality of memory units included in the target memory block, and program target dummy data into the target memory unit when it is determined that the target dummy data is not programmed into the target memory unit and when the program operation for the target memory unit is not yet completed.

Storage device programming target dummy data in target memory unit and operating method of the storage device

A storage device having an improved operation speed includes memory blocks and a sudden power-off manager. The memory blocks connected to word lines as part of a super block. The sudden power-off manager in communication with the memory blocks and configured to, in response to a sudden power off, 1) select reference word lines among the word lines to group the word lines into word line zones defined using the reference word lines, 2) perform read operations on pages connected to the reference word lines to determine states of the pages connected to the reference word lines, 3) select a first erase page search zone among the word line zones based on results of the read operations, and 4) determine a first erase page located at a boundary between a program page and an erase page in the first erase page search zone.

Storage device and operating method thereof

A memory system includes a storage medium including a memory region group having a plurality of memory regions; a memory configured to store a plurality of region read counts respectively corresponding to the plurality of memory regions and a group read count corresponding to the memory region group; a count management circuit configured to, when a first memory region among the plurality of memory regions is read-accessed, based on a first region read count corresponding to the first memory region among the plurality of region read counts, increase the group read count and reduce remaining region read counts other than the first region read count among the plurality of region read counts; and a reliability management circuit configured to perform a reliability management operation for the memory region group, based on the group read count.

Memory system with memory region read counts and a memory group read count and operating method thereof

A method for operating a data storage device includes obtaining test data from a target region of a memory block by applying a test bias simultaneously to all word lines of the memory block; and estimating a state of the memory block based on the test data.

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Icheon-si, South Korea

Dae Seok Shin