Seoul Viosys Co., Ltd.

Dae Seok Park

Chi Hyun In

Sang Min Kim

Hong Suk Cho

Chang Hoon Kim

Eun Ji Park

Jong Hyeon Chae

Jong Min Jang

Daewoong Suh

Hwa Mok Kim

Kyu Ho Lee

A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part.

Light emitting diode chip and light emitting device having the same

A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.

Light-emitting diode

The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.

A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.

Growing community of inventors

Ansan-si, South Korea

Dae Seok Park