Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Inktec Co., Inc.

Dae Seob Han

Yong Tae Moon

Kwang Sun Baek

Jeong Sik Lee

A Ra Cho

Young Suk Song

Kwang-Choon Chung

Ji Hoon Yoo

Jong-In Shim

Jung Hyun Hwang

Jong Ho Na

Joonki Seong

In-Sook Yi

Ha Jong Bong

A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.

Semiconductor device

A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.

Semiconductor device including indium, silicon and carbon with varying concentrations

Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

Semiconductor device and semiconductor device package including the same

Provided herein is a method for forming a transparent electrode film, the method comprising forming an electrode pattern by printing an electrode pattern on a release film using a metal ink composition; forming an insulating layer by applying a curable resin on the release film on which the electrode pattern has been formed; forming a substrate layer by laminating a substrate on the insulating layer; removing the release film; and forming a conductive layer by applying a conductive material on the electrode pattern from which the release film has been removed.

Method for manufacturing transparent electrode film

A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlGaN/AlGaN, such as AlGaN/AlGaN, on the active layer.

Light-emitting device

The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InAlGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1) layer having a second concentration and a second conductive AlGaN (0&#x3c;z&#x3c;1) layer having a third concentration on the active layer.

Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Light emitting device

Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; a GaN-based superlattice layeron the first conductive semiconductor layer; an active layeron the GaN-based superlattice layer; and a second conductive semiconductor layeron the active layer, wherein the GaN-based superlattice layerhas a bandgap energy level that varies in a direction from the first conductive semiconductor layerto the active layer

Light emitting element

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.

Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.

Light emitting device and lighting system having the same

A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Light emitting device, light emitting device package, and lighting system including the same

Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.

Growing community of inventors

Seoul, South Korea

Dae Seob Han