Electronics and Telecommunications Research Institute

Inha-Industry Partnership Institute

Dae Seo Park

Gyungock Kim

In Gyoo Kim

Jun Taek Hong

Jeong Woo Park

Ki Seok Jang

Sang Gi Kim

Sanghoon Kim

Junghyung Pyo

Duk Jun Kim

Sahnggi Park

Dongwoo Suh

JiHo Joo

Kap-Joong Kim

Do Won Kim

Jongbum You

Seung Gol Lee

Kwam Su Choi

Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Electro-optic modulating device

Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

Method of manufacturing semiconductor device having optical devices

Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

Semiconductor devices and methods of forming the same

A touch screen panel is disclosed, which is capable of sensing an exact position touched by a user or instrument, or a pressured applied to the touched position, wherein the touch screen panel comprises a core including a plurality of horizontal and vertical lines provided in a grid shape, wherein the core has a first refractive index, and an upper surface of the core is exposed to the atmosphere; an intermediate clad formed between each of gaps included in the core, wherein the intermediate clad has a second refractive index which is lower than the first refractive index, and a height of the intermediate clad is identical to a height of the core; an optical source configured to apply an optical signal to an input end of each of the plurality of horizontal and vertical lines; and a plurality of receivers configured to sense an intensity of the optical signal passing through an output end of each of the plurality of horizontal and vertical lines, the optical signal applied by the optical source.

Touch screen panel

Growing community of inventors

Incheon, South Korea

Dae Seo Park