Samsung Electronics Co., Ltd.

Dae-Lim Kang

Hyun-Jo Kim

Jong-Mil Youn

Soo-Hun Hong

Hwa-Sung Rhee

Sang-Hyun Woo

Seung-Han Yoo

Wei-Hua Hsu

Young-Chan Lee

Min-Ho Kwon

Jun-Suk Choi

An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

Electrostatic discharge protection devices

A test pattern of a semiconductor device is provided, which includes first and second fins formed to project from a substrate and arranged to be spaced apart from each other, first and second gate structures formed to cross the first and second fins, respectively, a first source region and a first drain region arranged on the first fin on one side and the other side of the first gate structure, a second source region and a second drain region arranged on the second fin on one side and the other side of the second gate structure, a first conductive pattern connected to the first and second drain regions to apply a first voltage to the first and second drain regions and a second conductive pattern connecting the first source region and the second gate structure to each other.

Test pattern of semiconductor device

A field effect transistor includes a first substrate region having a channel region and a second substrate region where a heavily doped region is formed. The channel region includes a first portion having a first width and a second portion having a second width larger than the first width. Related fabrication methods are also described.

Field effect transistors including variable width channels and methods of forming the same

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Hwaseong-si, South Korea

Dae-Lim Kang